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Simulation study of cleaning induced extreme ultraviolet reflectivity loss mechanisms on mask blanks
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10.1116/1.4746245
/content/avs/journal/jvstb/30/5/10.1116/1.4746245
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/5/10.1116/1.4746245
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) EUV reflectivity drop due to individual steps in the mask cleaning process after 50 cycles.

Image of FIG. 2.
FIG. 2.

(Color) Reflectivity maps along with their corresponding reflectivity drop plots for the individual steps in the mask cleaning process after 50 cleaning cycles.

Image of FIG. 3.
FIG. 3.

(Color online) EUV reflectivity loss as a function of the number of cleaning cycles.

Image of FIG. 4.
FIG. 4.

(a) TEM cross section of a mask blank once it has gone through 50 cleaning cycles. (b) TEM cross section of another mask blank post-50X cleaning cycles.

Image of FIG. 5.
FIG. 5.

(Color online) (a) 1 μm × 1 μm AFM scan of precleaned mask blank (rms roughness = 0.1 nm). (b) 1 μm line scan showing the roughness profile in one dimension. (c) 1 μm × 1 μm AFM scan of the mask blank after 15X cleaning cycles (AFM roughness = 0.15 nm). (d) 1 μm line scan showing the roughness profile in one dimension.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Oxygen depth profile of the Mo/Si multilayer structure post-cleaning process. (b) Silicon spectrum for the silicon layer underneath the capping ruthenium layer post-cleaning process.

Image of FIG. 7.
FIG. 7.

EUV reflectivity drop as a function of ML thickness etched.

Image of FIG. 8.
FIG. 8.

EUV reflectivity loss as a function of ML thickness oxidized.

Image of FIG. 9.
FIG. 9.

(Color) EUV reflectivity drop as a function of oxide thickness and ML thickness etched.

Image of FIG. 10.
FIG. 10.

(Color online) EUV reflectivity drop as a function of oxide thickness for two different oxidation states of Ru namely RuO2 and RuO3.

Image of FIG. 11.
FIG. 11.

EUV reflectivity as a function of carbon and ML thickness etched.

Image of FIG. 12.
FIG. 12.

Roughness profile used for the simulation.

Image of FIG. 13.
FIG. 13.

(Color online) EUV reflectivity loss as a function of number of rough bilayers for roughness amplitudes of 0.2 and 0.4 nm.

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/content/avs/journal/jvstb/30/5/10.1116/1.4746245
2012-08-14
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simulation study of cleaning induced extreme ultraviolet reflectivity loss mechanisms on mask blanks
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/5/10.1116/1.4746245
10.1116/1.4746245
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