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193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors
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10.1116/1.4751278
/content/avs/journal/jvstb/30/5/10.1116/1.4751278
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/5/10.1116/1.4751278

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Photograph of HEMT (a) before and (b) after drilling grooves along the edges of the device.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Photograph of a LLO HEMT placed on a flat glass substrate. (b) Photograph of the laser-drilled edge.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Drain I-V characteristics of AlGaN/GaN HEMT before and after the LLO process. (b) Square root of the drain current as a function of the gate voltage of the AlGaN/GaN HEMT before and after the LLO process.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Forward and reverse gate I-V before and after laser lift off. (b) Drain punch-through voltage measured at Vg of −7 V for the AlGaN/GaN before and after laser lift off.

Image of FIG. 5.
FIG. 5.

Cross-sectional transmission electron micrographs of AlGaN/GaN HEMT (a) before and (b) after the LLO process.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Photograph of LLO circular AlGaN/GaN HEMT sample placed on Si wafer, showing Newton's rings clearly visible across the sample. (b) Schematic of the LLO circular AlGaN/GaN HEMT sample.

Image of FIG. 7.
FIG. 7.

(Color online) Raman spectrum E2 peak from a HEMT sample before and after the LLO process.

Tables

Generic image for table
TABLE I.

Characteristics of Newton's rings formed by placing circular LLOHEMT on a Si wafer and the estimated strain relaxation of the LLO HEMT.

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/content/avs/journal/jvstb/30/5/10.1116/1.4751278
2012-09-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/5/10.1116/1.4751278
10.1116/1.4751278
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