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Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching
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10.1116/1.4756947
/content/avs/journal/jvstb/30/6/10.1116/1.4756947
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/6/10.1116/1.4756947
/content/avs/journal/jvstb/30/6/10.1116/1.4756947
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/content/avs/journal/jvstb/30/6/10.1116/1.4756947
2012-10-09
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/6/10.1116/1.4756947
10.1116/1.4756947
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