Schematic of template wafer for electroplating and transfer of In bumps.
Schematic of hot embossing process to form vias in a fluoropolymer with a Si stamp.
Schematic of the template wafer prior to hot embossing.
Schematic of the two step etching process used to pattern the Si stamp.
SEM images of pillars etched in Si: (a) 10 μm pitch round pillars post-DRIE, (b) 6 μm pitch square pillars post-DRIE, (c) 10 μm pitch pillars postwet etch and (d) 6 μm pitch pillars postwet etch.
SEM images of vias embossed into the fluoropolymer: (a) cross-section of a via, (b) 12 μm pitch vias, (c) 6 μm vias and (d) vias where the fluoropolymer pulled away from the Ni surface.
Imagery of defect-free embossing of the fluoropolymer on a roughened Ni surface: (a) low-magnification optical microscopy and (b) higher magnification SEM image of the same vias.
SEM image of electroplated In filling the vias in the fluoropolymer.
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