Relationship between film thickness loss and polymer deprotection for extreme ultraviolet and ArF photoresists
(Color online) (a) Example of the absorbance in the region of 1600 to 1850 cm−1. The black line is the experimental data, and the gray line (online color: red) is the fit, with each of the dashed lines being an individual peak fit by a Voigt distribution; (b) The progressive change of the same region is plotted as a function of exposure dose.
(Color online) (a) Deprotection of the open source resist exposed at ArF, for different postexposure bakes, as a function of the film thickness loss. The red dashed line shows the threshold below which the FTL is not significant. (b) Both the deprotection and the FTL as a function of the exposure dose at 100 °C PEB. Nominal resist thickness was 75 nm.
(Color online) Deprotection plotted as a function of the film thickness loss for a state-of-the-art commercially available resist exposed in EUV (60 nm initial resist thickness). A logarithmic fit is shown by the dashed red line: y = 0.54 ln(x + 1).
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