(Color online) Simplified schematics of the device process.
(Color online) Atomic force micrograph of cross section of a SOI trench after HF etch. We find rather steep flanks in the top silicon layer, and determine a depth of 190 nm. (Only the middle part is real data, the outer flat lower parts to the left and right were not recorded, but added by the AFM software.)
(Color online) Representative images of the final device. (a) Device size displayed in comparison to a coin; (b) light microscope image of the patterned SOI after etching; (c) and (d) SEM micrographs of ZnO nanowires grown over the trenches with different magnifications.
(Color online) Low temperature (T = 8 K) PL spectra of the high quality ZnO nanowires (a) in a broad spectral range. No defect related green or yellow luminescence band is observed; (b) in the near band gap region showing details of bound and free exciton recombination.
(Color online) Current–voltage characteristics of (a) the photodetector in dark and (b) aluminum contacts on bare SOI substrate proofing ohmic behavior. The inset shows a schematics of the measurement device.
(Color online) (a) Time dependence of the photocurrent of the SOI based ZnO photodetector at 0.1 V bias under modulated illumination by a Xe lamp at 365 nm. (b) Spectral responsitivity of the SOI based ZnO photodetector. (c) Schematics of the band alignment of the SOI based ZnO photodetector in equilibrium conditions.
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