Fabrication of nanodot array mold with 2 Tdot/in.2 for nanoimprint using metallic glass
(Color online) (a) SE and (b) RE microphotographs of cross section of Pt-deposited SiO2/Si substrate with a dot pitch (L p) of 33 nm observed by FE-SEM. (c) AFM image and cross-sectional profile of the deposited Pt on SiO2 at L p = 200 nm.
(Color online) Pt mask patterning result of nanodot array at L p = 18 nm. (a) SE and RE images of top view of patterned specimen. (b) Cross-sectional RE image of Pt-deposited SiO2/Si substrate in (a). (c) Result of Ar plasma etching of Pt-deposited SiO2/Si substrate at L p = 18 nm. (d) Cross-sectional RE image of substrate in (c). (e) Schematic illustration of Pt-mask-patterned SiO2/Si substrate at L p = 18 nm in spot mode of FIB.
(a)–(c) SEM microphotographs and histograms of results of heat treatment of the Pt mask at L p = 18 nm. Heating temperatures were (a) 973, (b) 1073, and (c) 1173 K. (d) Effects of heating temperature on circularity (D b/D a) and standard deviation of dot pitch (σ p).
Cross-sectional RE images of the heated substrates at (a) 1073 K and (b) 1173 K after forming Pt mask at L p = 18 nm.
(Color online) Investigation of resolution limit of Pt mask patterning. (a) SEM microphotographs of fabricated Pt masks with L p = 16–14 nm at t d = 2–6 ms/dot. (b) Relationship between L p and maximum dwell time (t d1) during isolated Pt mask formation. (c) Dependence of L p on Pt mask diameter (D d) and its variation (σ d).
SEM microphotographs of fabricated SiO2/Si mold of nanodot array at L p = (a) and (b) 18, (c) 16, (d) 14, and (e) 12 nm. (a) and (c)–(e) are tilted views at 55°, and (b) is a cross-sectional SE image of the specimen in (a).
SEM microphotographs of surface of Pd-based metallic glass nanoimprinted by using the mold with nanodot array having 18-nm pitch: (a) first impression, (b) and (c) second impression. (a) and (b) are top views, and (c) is tilted view at 55°.
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