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Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices
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10.1116/1.4766303
/content/avs/journal/jvstb/30/6/10.1116/1.4766303
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/6/10.1116/1.4766303
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram showing HEMT device geometry in cross-section, including typical dimensions. (b) SEM image showing entire HEMT device cross-section during TEM sample preparation using FIB milling. The AlGaN barrier is a layer ∼20 nm thick just above the GaN channel/buffer layer.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Off-state total gate current, gate-to-source current, and gate-to-drain current for undegraded HEMT, as a function of gate voltage. (b) Off-state total gate current, gate-to-source current, and gate-to-drain current for the source-side-degraded HEMT, as a function of gate voltage. (c) Off-state total gate current, gate-to-source current, and gate-to-drain current for the drain-side-degraded HEMT, as a function of gate voltage.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Drain IV characteristics, (b) extrinsic transconductance and drain current, and (c) forward and reverse gate IV characteristics, for HEMT not showing critical voltage during gate step-stress testing.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Drain I–V characteristic, (b) extrinsic transconductance and drain current, and (c) forward and reverse gate I–V characteristics, showing critical voltage in Igs during gate-voltage ramping. (d) Drain I–V characteristic, (e) extrinsic transconductance and drain current, and (f) forward and reverse gate I–V characteristics, showing critical voltage in Igd during gate-voltage ramping.

Image of FIG. 5.
FIG. 5.

Unstressed device: (a) low magnification BF-TEM image showing region of gate contact, (b) enlarged BF-TEM image showing drain side of gate edge, (c) enlarged image showing source side of gate edge, and (d) enlarged image showing metal diffusion (arrowed) into AlGaN barrier layer.

Image of FIG. 6.
FIG. 6.

Source-side-degraded device: (a) low magnification image showing gate contact, (b) enlarged image showing source side of gate edge with no apparent defects visible, and (c) enlarged image showing a pit defect at the drain side of gate edge.

Image of FIG. 7.
FIG. 7.

Drain-side-degraded-device: (a) low magnification BF-TEM image showing gate contact, (b) enlarged image showing drain side of gate edge with small pit defect visible in AlGaN layer just beyond the gate edge, and (c) enlarged image showing source side of gate edge with small pit defect visible in AlGaN layer just beyond the edge of gate (Ref. 14).

Image of FIG. 8.
FIG. 8.

(Color online) Drain-side-degraded device. (a) STEM image under the gate; (b) EELS elemental profile along line labeled "1" in (a) showing unexpected presence of oxygen and evidence for considerable Ni diffusion into AlGaN layer, and (c) EELS elemental profile along line labeled "2" in (a) showing sharp interface and evidence for considerable oxygen.14

Image of FIG. 9.
FIG. 9.

(Color online) Undegraded device: (a) low magnification image showing entire width of gate contact, (b) STEM image from region under the gate, and (c) corresponding EELS elemental profile indicating considerable oxygen at gate/AlGaN interface.

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/content/avs/journal/jvstb/30/6/10.1116/1.4766303
2012-11-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/6/10.1116/1.4766303
10.1116/1.4766303
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