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Interface quality of Sc2O3 and Gd2O3 films based metal–insulator–silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes
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10.1116/1.4768678
/content/avs/journal/jvstb/31/1/10.1116/1.4768678
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/1/10.1116/1.4768678
/content/avs/journal/jvstb/31/1/10.1116/1.4768678
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/content/avs/journal/jvstb/31/1/10.1116/1.4768678
2012-11-27
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface quality of Sc2O3 and Gd2O3 films based metal–insulator–silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/1/10.1116/1.4768678
10.1116/1.4768678
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