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Performance comparison of front- and back-illuminated AlGaN-based metal–semiconductor–metal solar-blind ultraviolet photodetectors
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10.1116/1.4769250
/content/avs/journal/jvstb/31/1/10.1116/1.4769250
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/1/10.1116/1.4769250
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Optical transmission spectrum of a control plain Ni/Au (5/5 nm) semitransparent metal layer deposited on bare sapphire substrates. The insets show the schematic cross-sectional view of the MSM solar-blind photodetector (a) and the top-view image of one fabricated device (b).

Image of FIG. 2.
FIG. 2.

(Color online) Optical transmission spectrum of the epiwafer. The inset shows the variation of (αhν)2 as a function of photon energy (hν) for the AlGaN active layer.

Image of FIG. 3.
FIG. 3.

(Color online) Dark and photocurrent curves of the PD measured at RT and 150 °C, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) Spectral response characteristics of the PD measured at various reverse biases in front-illumination mode (a) and back-illumination mode (b). The inset shows the peak responsivity of the PD as a function of bias voltage in both illumination modes.

Image of FIG. 5.
FIG. 5.

(Color online) Front- and back-surface reflectance characteristics of the epiwafer.

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/content/avs/journal/jvstb/31/1/10.1116/1.4769250
2012-11-30
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance comparison of front- and back-illuminated AlGaN-based metal–semiconductor–metal solar-blind ultraviolet photodetectors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/1/10.1116/1.4769250
10.1116/1.4769250
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