Performance comparison of front- and back-illuminated AlGaN-based metal–semiconductor–metal solar-blind ultraviolet photodetectors
(Color online) Optical transmission spectrum of a control plain Ni/Au (5/5 nm) semitransparent metal layer deposited on bare sapphire substrates. The insets show the schematic cross-sectional view of the MSM solar-blind photodetector (a) and the top-view image of one fabricated device (b).
(Color online) Optical transmission spectrum of the epiwafer. The inset shows the variation of (αhν)2 as a function of photon energy (hν) for the AlGaN active layer.
(Color online) Dark and photocurrent curves of the PD measured at RT and 150 °C, respectively.
(Color online) Spectral response characteristics of the PD measured at various reverse biases in front-illumination mode (a) and back-illumination mode (b). The inset shows the peak responsivity of the PD as a function of bias voltage in both illumination modes.
(Color online) Front- and back-surface reflectance characteristics of the epiwafer.
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