(Color online) Schematic device structure of the OTFTs with ZrO2/Al2O3, Al2O3/ZrO2, and Al2O3/ZrO2/Al2O3 gate dielectrics.
(Color online) Current density vs. electric field intensity of the MIM capacitors with different types of stacked gate dielectrics. The inset graph is the schematic diagram of the device.
(Color online) Electrical output characteristics (Id -Vd ) of the OTFTs with different dielectric structures (a) ZrO2/Al2O3, (b) Al2O3/ZrO2/Al2O3, and (c) Al2O3/ZrO2.
(Color online) Transfer characteristic (Id -Vg ) of the CuPc TFTs with different types of stacked gate dielectric at a fixed Vd of −4 V. The inset graph is the AFM image of CuPc film deposited at room temperature.
(Color online) (a) Transfer characteristics of the AZ sample for different stress times under a fixed gate-bias stress of −3.5 V. The percentage change of the subthreshold slope and on/off ratio as a function of stress time is depicted in the inset. Negative sign means the values are smaller than prestressed ones. (b) Transfer characteristics of the AZ sample before and after removing −3.5 V to the gate contact. The inset shows the percentage change of the subthreshold and on/off ratio as a function of relaxation time.
Change in (a) subthreshold slope (ΔSS) and (b) on/off ratio (Δon/off) of the AZ, AZA, and ZA samples after stressing at a constant gate bias of −3.5 V for 3600 s and after relaxation for 15 min.
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