(Color online) (a) Isometric view of the contact hole target, including an illustration of the incident and reflected SE beam. (b) Top view of the single unit cell contact hole model. The pitch is 400 nm × 400 nm.
Top–down CD-SEM images of the four targets: (a) target 1: nominal ellipticity = 1; (b) target 2: nominal ellipticity = 1.1; (c) target 3: nominal ellipticity = 1.25, (d) target 4: nominal ellipticity = 1.45. (e) The top–down XSEM image showing the nonvertical obtuse SWA (angle > 90°).
Line profile cross section of the contact hole. The schematic illustrates the TCD and BCD and B_Footing parameters used in the model.
(Color online) Refractive index n and extinction coefficient k for SiO2.
(Color online) Alpha and beta spectra calculated and plotted in the UV–visible range of 235–750 nm to simulate our standard UVSE subsystem spectral response. Two set of top CD/bottom CD values were used in the simulation: TCD = 195 nm /BCD = 185 nm and TCD = 185 nm/BCD = 195 nm.
(Color online) Similar to Fig. 4 , calculated DUVSE spectra in the wavelength range of 160–235 nm.
(Color online) Experimental and regressed model UVSE spectra of one measured site—target 3.
(Color online) Experimental and regressed model combined UVSE + DUVSE spectra of one measured site—target 3.
(Color online) Measured SE TCD and BCD for all 36 sites (9 sites/target) using (a) UVSE only and (b) combined UVSE + DUVSE.
Correlation between measurements using SE OCD and SEM.
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