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Effect of oxygen plasma treatment on nonalloyed Al/Ti-based contact for high power InGaN/GaN vertical light-emitting diodes
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10.1116/1.4773006
/content/avs/journal/jvstb/31/1/10.1116/1.4773006
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/1/10.1116/1.4773006

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Process sequence for plasma treatment.

Image of FIG. 2.
FIG. 2.

(Color online) Schematic of InGaN/GaN vertical LEDs.

Image of FIG. 3.
FIG. 3.

(Color online) Forward voltage characteristics for different types of LEDs at 350 mA. Types A and B are Cr/Au and Al/Ti electrodes, respectively, without plasma treatment. Types C and D are plasma-treated Al/Ti electrodes. All types except for type C are cleaned with HCl prior to n-metal deposition.

Image of FIG. 4.
FIG. 4.

(Color online) XPS spectra of the Ga 3d for Ar plasma-treated LEDs. The control sample is type A and the Ar treated sample is type E in Table I .

Image of FIG. 5.
FIG. 5.

(Color online) XPS spectra of the Ga 3d for different types of LEDs.

Image of FIG. 6.
FIG. 6.

(Color online) Output power change and percentage change in conversion efficiency for different types of LEDs.

Tables

Generic image for table
TABLE I.

XPS elemental composition of control and plasma-treated samples.

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/content/avs/journal/jvstb/31/1/10.1116/1.4773006
2012-12-21
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of oxygen plasma treatment on nonalloyed Al/Ti-based contact for high power InGaN/GaN vertical light-emitting diodes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/1/10.1116/1.4773006
10.1116/1.4773006
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