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Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterning
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10.1116/1.4773063
/content/avs/journal/jvstb/31/1/10.1116/1.4773063
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/1/10.1116/1.4773063

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Etch rates of reference resist, VUV cured resist, and HBr cured resist as a function of Si-ARC etching plasma processing time. Two treatment exposure times 30 and 200 s have been investigated.

Image of FIG. 2.
FIG. 2.

(Color online) FTIR spectra in the carbonyl region (1575–1875 cm−1) before and after 10, 20, 30, 40 s of Si-ARC etching for (a) reference resist, (b) 30 s VUV cured resist, (c) 30 s HBr cured resist.

Image of FIG. 3.
FIG. 3.

(Color online) Light transmission of 1 mm thick MgF2 window.

Image of FIG. 4.
FIG. 4.

(Color online) Evolution of RMS surface roughness with Si-ARC plasma processing time for reference resist, 30s VUV and HBr cured resists, and 200 s VUV and HBr resists.

Image of FIG. 5.
FIG. 5.

(Color online) Evolution of RMS surface roughness with etched depth during Si-ARC process for reference resist, 30 s VUV and HBr cured resists, and 200 s VUV and HBr resists.

Image of FIG. 6.
FIG. 6.

(Color online) Evolution of pattern profiles as a function of Si-ARC plasma processing time for (a) reference resist, (b) HBr cured resist, (c) VUV cured resist.

Image of FIG. 7.
FIG. 7.

(Color online) Evolution of (a) instantaneous vertical etch rates and (b) critical dimension loss as a function of Si-ARC plasma processing time for reference and cured photoresist patterns.

Image of FIG. 8.
FIG. 8.

(Color online) Evolution with the Si-ARC plasma processing time of the LWR along the pattern sidewalls measured by CD-AFM for (a) reference resist, (b) HBr cured resist, (c) VUV cured resist.

Image of FIG. 9.
FIG. 9.

(Color online) Evolution of Si-ARC LWR with processing time measured by CD-AFM for (a) reference, 30 s HBr cured, and 30 s VUV cured resists.

Image of FIG. 10.
FIG. 10.

(Color online) PSDs of photoresist lines obtained from CD-SEM analyses after lithography, 30s HBr plasma treatment, and 30s VUV treatment. Open symbols stand for experimental data and solid lines represent theoretical fits. The x abscise represents the wave number equal to 2πn/L, where n = 0, 1,…, N − 1 (N = 400) and L is the length of the line equal to 2200 nm. After equipment noise removal from the spectra, PSDs are arbitrary readjusted to a σnoise of 1 nm to allow comparison.

Image of FIG. 11.
FIG. 11.

(Color online) Evolution of the true LWR (σtrue ) after each technological step involved in Si patterning: before etch, Si-ARC etching, spin on carbon etching, silicon etching, and hard mask removal in the case of reference, 30s HBr cured, and 30 s VUV cured resists. True LWR is measured by CD-SEM analyses using PSD fitting method.

Image of FIG. 12.
FIG. 12.

(Color online) PSDs obtained from CD-SEM analyses before and after Si etching for (a) reference, (b) HBr cured resist, and (c) VUV cured resist. Open symbols stand for experimental data and solid lines represent theoretical fits. The x abscise represents the wave number equal to 2πn/L, where n = 0, 1,…, N − 1 (N = 400) and L is the length of the line equal to 2200 nm. After equipment noise removal from the spectra, PSDs are arbitrary readjusted to a σnoise of 1 nm to allow comparison.

Image of FIG. 13.
FIG. 13.

(Color online) (a) Evolution of the correlation length and (b) roughness exponent after each technological step involved in Si patterning: before etch, Si-ARC etching, spin on carbon etching, silicon etching, and hard mask removal. Similar experiments have been performed for reference resist (no treatment), VUV, and HBr plasma cured resist patterns.

Tables

Generic image for table
TABLE I.

Plasma etching processes involved in Si patterning.

Generic image for table
TABLE II.

Roughness parameters obtained by the PSD fitting method for reference, HBr cured, and VUV cured resists.

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/content/avs/journal/jvstb/31/1/10.1116/1.4773063
2012-12-26
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterning
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/1/10.1116/1.4773063
10.1116/1.4773063
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