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Synthesis of diamond nanotips for enhancing the plasma illumination characteristics of capacitive-type plasma devices
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10.1116/1.4769973
/content/avs/journal/jvstb/31/2/10.1116/1.4769973
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4769973

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagrams showing (a) the lithographic procedure for the fabrication of the Si-tip array and (b) the detailed structure of the capacitive-type plasma devices with the inset showing the bipolar pulsed mode measuring signal.

Image of FIG. 2.
FIG. 2.

SEM micrographs of the Si-tip array fabricated on Si-substrates (a) before and (b) after the removal of the SiO2 pads, which were used as masks in the anisotropic etching process; (c) enlarged micrograph of the Si-tip in the array before the removal of the SiO2 pads.

Image of FIG. 3.
FIG. 3.

SEM micrographs of the diamond film coated Si-tip array: (a) MCD/Si film directly grown on the Si-tip array without using the nucleation layer and (b) MCD/UNCD film coated on the Si-tip array using a thin UNCD film as the nucleation layer (the scale bars in the insets of the figures represent 2μm).

Image of FIG. 4.
FIG. 4.

(Color online) Raman spectra of MCD films coated on the Si-tip array (I) without and (II) with the utilization of a UNCD film as the nucleation layer.

Image of FIG. 5.
FIG. 5.

(Color online) Plasma illumination characteristics of the capacitive-type plasma devices fabricated by coating an MCD film on the Si-tip array (a) without and (b) with a UNCD films as the nucleation layer.

Image of FIG. 6.
FIG. 6.

(Color online) Plasma current as a function of applied voltage for the capacitive-type plasma device fabricated by coating an MCD film on Si-tip templates (I) without and (II) with a thin UNCD film as the nucleation layer.

Image of FIG. 7.
FIG. 7.

(Color online) Electron field emission properties (current density vs applied field) of the (I) MCD/Si grown on the Si-tip array directly without the nucleation layer, and (II) MCD/UNCD films grown with a thin UNCD film as the nucleation layer.

Image of FIG. 8.
FIG. 8.

(Color online) (a) TEM bright field and (b) composed dark field images of the MCD/Si film, with samples aligned along the zone-axis; (c) TEM bright field and (d) composed dark field images of the film with the samples tilted away from the zone-axis (the insets in (a) and (c) show the SAED pattern), and [(e) and (f)] TEM structure images of two typical regions in MCD/Si film, revealing the presence of planar defects in these films with the insets showing the Fourier-transformed diffractogram (thescale bars in the insets of the figures represent 0.2 nm−1).

Image of FIG. 9.
FIG. 9.

(a) TEM bright field images of the UNCD nucleation layer, with the insets showing the SAED pattern of the corresponding bright field images; (b) TEM structure image of a typical region in the UNCD layer.

Image of FIG. 10.
FIG. 10.

(Color online) (a) TEM bright field and (b) composed dark field images of the MCD/UNCD film, with the samples aligned along the zone-axis (the insets show the SAED pattern); (c) TEM bright field and (d) composed dark field images of these films with samples tilted away from the zone-axis (the insets in (a) and (c) show the SAED pattern), and [(e) and (f)] TEM structure images of two typical small-grain regions in the MCD/UNCD film, revealing the coexistence of small grains with large diamond aggregates in these films with the insets showing the Fourier-transformed diffractogram (the scale bars in the insets of the figures represent 0.2 nm−1).

Tables

Generic image for table
TABLE I.

Parameters used in the MPE-CVD process for growing the nucleation layer and the diamond films.

Generic image for table
TABLE II.

EFE and plasma illumination properties for the capacitive microplasma devices using MCD/Si or MCD/UNCD films as cathodes.

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/content/avs/journal/jvstb/31/2/10.1116/1.4769973
2012-12-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Synthesis of diamond nanotips for enhancing the plasma illumination characteristics of capacitive-type plasma devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4769973
10.1116/1.4769973
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