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Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal–semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques
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10.1116/1.4788805
/content/avs/journal/jvstb/31/2/10.1116/1.4788805
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4788805
/content/avs/journal/jvstb/31/2/10.1116/1.4788805
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/content/avs/journal/jvstb/31/2/10.1116/1.4788805
2013-01-30
2015-02-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal–semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4788805
10.1116/1.4788805
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