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Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors
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10.1116/1.4788904
/content/avs/journal/jvstb/31/2/10.1116/1.4788904
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4788904
/content/avs/journal/jvstb/31/2/10.1116/1.4788904
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/content/avs/journal/jvstb/31/2/10.1116/1.4788904
2013-01-25
2014-08-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4788904
10.1116/1.4788904
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