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Impact of both metal composition and oxygen/nitrogen profiles on p-channel metal-oxide semiconductor transistor threshold voltage for gate last high-k metal gate
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10.1116/1.4789424
/content/avs/journal/jvstb/31/2/10.1116/1.4789424
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4789424
/content/avs/journal/jvstb/31/2/10.1116/1.4789424
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/content/avs/journal/jvstb/31/2/10.1116/1.4789424
2013-01-25
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of both metal composition and oxygen/nitrogen profiles on p-channel metal-oxide semiconductor transistor threshold voltage for gate last high-k metal gate
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4789424
10.1116/1.4789424
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