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Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations
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10.1116/1.4789427
/content/avs/journal/jvstb/31/2/10.1116/1.4789427
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4789427
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Ge growth thickness vs growth time on GaAs substrates with different orientations. (b) Incubation time (squares) and growth rate (dots) of Ge films grown on GaAs substrates with different orientations.

Image of FIG. 2.
FIG. 2.

(Color online) XRD measurement of 150-nm-thick Ge epitaxial films on (a) GaAs (100), (b) GaAs (110), and (c) GaAs (111)A substrates. The black and red lines represent the HRXRD data and simulated curve, respectively. The Pendellösung fringes on both sides imply a sharp and parallel Ge/GaAs interface.

Image of FIG. 3.
FIG. 3.

(Color online) PL infrared spectrum of Ge epitaxial films on (100), (110), and (111) GaAs substrates with 330-mW PL incident laser power.

Image of FIG. 4.
FIG. 4.

(Color online) AFM measurement of 150-nm-thick Ge epitaxial films on (a) GaAs (100), (b) GaAs (110), and (c) GaAs (111)A substrates. The scale of each figure is 30 μm × 30 μm.

Image of FIG. 5.
FIG. 5.

Cross-sectional TEM image of 150-nm-thick Ge grown on (a) GaAs (100), (b) GaAs (110), and (c) GaAs (111)A substrates. No threading dislocations are detected in any of the Ge films.

Image of FIG. 6.
FIG. 6.

(Color online) AFM measurement of Ge epitaxial films grown for 60 min on (a) GaAs (100), (b) GaAs (110), and (c) GaAs (111)A substrates. The thicknesses of the Ge film are 2234, 55, and 243 nm, respectively. The scale of each figure is 30 μm × 30 μm.

Image of FIG. 7.
FIG. 7.

(Color online) AFM measurement of a 220 nm-thick Ge epitaxial film on a GaAs (110) substrate. The rms roughness and Ra values are 0.37 and 0.26 nm, respectively.

Image of FIG. 8.
FIG. 8.

(Color online) Capacitance–voltage measurement of (a) Al2O3/150-nm Ge/GaAs (100) and (b) Al2O3/220-nm Ge/GaAs (110) MOSCAPs at frequencies from 100 Hz to 1 MHz.

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/content/avs/journal/jvstb/31/2/10.1116/1.4789427
2013-01-30
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4789427
10.1116/1.4789427
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