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Diffraction-assisted extreme ultraviolet proximity lithography for fabrication of nanophotonic arrays
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Photo (a) and scheme (b) of the experimental setup for EUV proximity lithography used in this study.

Image of FIG. 2.
FIG. 2.

(Color online) Scheme of the lithography front-end, including a transmission mask and a resist coated wafer. The coordinate system and the relevant values are defined.

Image of FIG. 3.
FIG. 3.

(Color online) Measured emission spectrum of the DPP source with a Xe/Ar gas mixture. The set of wavelengths chosen for the simulation is shown with bars. The wavelength and relative intensity of each wavelength (waveweights) are written in the inset to the figure.

Image of FIG. 4.
FIG. 4.

(Color online) Design of the circular aperture (a) and corresponding light propagation along the z-axis (b), as well as aerial images of intensity at 12 μm (c) and 19 μm (d) proximity gaps.

Image of FIG. 5.
FIG. 5.

(Color online) Design of the triangular aperture array (a) and the related intensity distribution behind the aperture with a 15 μm proximity gap (b).

Image of FIG. 6.
FIG. 6.

(Color online) AFM images of the resists with 40 nm thickness exposed by EUV proximity lithography for circular (a) and triangular (b) apertures with a 15 μm proximity gap. Overlay images show the respective aerial images obtained from simulations.

Image of FIG. 7.
FIG. 7.

(Color online) (a) Scheme of the simulated bowtie mask, and the (b) x–y plane intensity image with a 5 μm gap.

Image of FIG. 8.
FIG. 8.

(Color online) (a) Scheme of the modified bowtie mask, and the (b) aerial image with a 5 μm proximity gap.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diffraction-assisted extreme ultraviolet proximity lithography for fabrication of nanophotonic arrays