(Color online) Photo (a) and scheme (b) of the experimental setup for EUV proximity lithography used in this study.
(Color online) Scheme of the lithography front-end, including a transmission mask and a resist coated wafer. The coordinate system and the relevant values are defined.
(Color online) Measured emission spectrum of the DPP source with a Xe/Ar gas mixture. The set of wavelengths chosen for the simulation is shown with bars. The wavelength and relative intensity of each wavelength (waveweights) are written in the inset to the figure.
(Color online) Design of the circular aperture (a) and corresponding light propagation along the z-axis (b), as well as aerial images of intensity at 12 μm (c) and 19 μm (d) proximity gaps.
(Color online) Design of the triangular aperture array (a) and the related intensity distribution behind the aperture with a 15 μm proximity gap (b).
(Color online) AFM images of the resists with 40 nm thickness exposed by EUV proximity lithography for circular (a) and triangular (b) apertures with a 15 μm proximity gap. Overlay images show the respective aerial images obtained from simulations.
(Color online) (a) Scheme of the simulated bowtie mask, and the (b) x–y plane intensity image with a 5 μm gap.
(Color online) (a) Scheme of the modified bowtie mask, and the (b) aerial image with a 5 μm proximity gap.
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