(Color online) Representative transfer curves (VDS = 40 V) of postannealed (a) 450 °C TiOx TFT and (b) 550 °C TiOx TFT under negative gate bias stress (VGS = −20 V) as a function of time (1, 100, 1000, 3600 s). Dependence of the Vth shift on (c) positive bias stress (+20 V) and (d) negative bias stress (−20 V) for the 450 °C TiOx and 550 °C TiOx TFTs.
(Color online) XPS O1s spectra for TiOx films annealed temperature at (a) 450 °C and (b) 550 °C.
(Color online) Absorption coefficient of TiOx thin films measured by SE, as a function of annealing temperature.
(Color online) Field effect mobility (μFE) and SS values for different annealing temperatures (450 and 550 °C) extracted as a function of device temperature.
(Color online) (a) XRD spectra and plan view bright field TEM images of (b) 450 °C TiOx and (c) 550 °C TiOx thin film with electron diffraction patterns (inset).
Article metrics loading...
Full text loading...