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Device instability of postannealed TiOx thin-film transistors under gate bias stresses
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10.1116/1.4790572
/content/avs/journal/jvstb/31/2/10.1116/1.4790572
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4790572
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Representative transfer curves (VDS = 40 V) of postannealed (a) 450 °C TiOx TFT and (b) 550 °C TiOx TFT under negative gate bias stress (VGS = −20 V) as a function of time (1, 100, 1000, 3600 s). Dependence of the Vth shift on (c) positive bias stress (+20 V) and (d) negative bias stress (−20 V) for the 450 °C TiOx and 550 °C TiOx TFTs.

Image of FIG. 2.
FIG. 2.

(Color online) XPS O1s spectra for TiOx films annealed temperature at (a) 450 °C and (b) 550 °C.

Image of FIG. 3.
FIG. 3.

(Color online) Absorption coefficient of TiOx thin films measured by SE, as a function of annealing temperature.

Image of FIG. 4.
FIG. 4.

(Color online) Field effect mobility (μFE) and SS values for different annealing temperatures (450 and 550 °C) extracted as a function of device temperature.

Image of FIG. 5.
FIG. 5.

(Color online) (a) XRD spectra and plan view bright field TEM images of (b) 450 °C TiOx and (c) 550 °C TiOx thin film with electron diffraction patterns (inset).

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/content/avs/journal/jvstb/31/2/10.1116/1.4790572
2013-02-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Device instability of postannealed TiOx thin-film transistors under gate bias stresses
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4790572
10.1116/1.4790572
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