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Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography
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10.1116/1.4790655
/content/avs/journal/jvstb/31/2/10.1116/1.4790655
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4790655

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the patterning prediction process.

Image of FIG. 2.
FIG. 2.

(Color online) Drawn layouts of the poly layer (black solid line) and the active layer (red dotted line) for the 6T-SRAM cell.

Image of FIG. 3.
FIG. 3.

(Color online) Schematic of CJL and LES at the driver and the access transistors for the 6T-SRAM cell circuit layout.

Image of FIG. 4.
FIG. 4.

Schematic of the feedback compensation procedure.

Image of FIG. 5.
FIG. 5.

Schematic of comparison procedure for correction results with the target PSF and the parametric PSFs.

Image of FIG. 6.
FIG. 6.

(Color online) Comparison of the fitting results with the target PSF (MC AED), the three conventional PSFs (2G, 3G, and 2G + 1E), and the new PSF (1G + 2E) at (a) the overall region, (b) the intermediate region, (c) the FS region, and (d) the BS region at resist thickness of 62 nm.

Image of FIG. 7.
FIG. 7.

(Color online) Comparison of the fitting results with the target PSF (MC AED), the three conventional PSFs (2G, 3G, and 2G + 1E), and the new PSF (1G + 2 E) at (a) the overall region, (b) the intermediate region, (c) the FS region, and (d) the BS region at resist thickness of 32 nm.

Image of FIG. 8.
FIG. 8.

(Color online) Comparison of the fitting results with the target PSF (MC AED), the three conventional PSFs (2G, 3G, and 2G + 1E), and the new PSF (1G + 2E) at (a) the overall region, (b) the intermediate region, (c) the FS region, and (d) the BS region at resist thickness of 16 nm.

Image of FIG. 9.
FIG. 9.

(Color online) Comparison of patterning fidelity limitation with the target PSF on CJLs at the driver and the access transistors (depicted with the inward-pointing and dotted arrows, respectively) on the poly layer of the 6T-SRAM cell when beam sizes are zero at the (a) 32-, (b) 15-, and (c) 8-nm HP nodes (without significant patterning fidelity limitation) and when beam sizes are one-half of the line widths at the (d) 32-, (e) 15-, and (f) 8- HP nodes (with significant patterning fidelity limitation).

Image of FIG. 10.
FIG. 10.

(Color online) Comparison of the patterning prediction results with the target, the conventional 2G + 1E, and the new 1G + 2E PSFs on the poly layer of the 6T-SRAM cell. The overall appearances of the calculated pattern contours obtained from the target, the conventional 2G + 1E, and the new 1G + 2E PSFs at the (a) 32-, (b) 15-, and (c) 8-nm HP nodes. The CJLE (depicted with inward-pointing open arrows) and the LES (depicted with inward-pointing dotted arrows) of the driver transistor at the (d) 32-, (e) 15-, and (f) 8-nm HP nodes, which all demonstrate smaller deviation from the target PSF with the new PSF than the conventional PSF.

Image of FIG. 11.
FIG. 11.

(Color online) Effectiveness and thus requirement for applying the model-based PEC approach with shape modification to alleviate the patterning fidelity limitation. The overall appearances of the calculated pattern contours obtained from the target PSF before and after correction at (a) 32-, (b) 15-, and (c) 8-nm HP nodes. Improvements of CJLE (depicted with the open arrows) and LES (depicted with the dotted arrows) at the driver transistor on the poly layer of the 6T-SRAM cell at the (d) 32-, (e) 15-, and (f) 8-nm HP nodes.

Image of FIG. 12.
FIG. 12.

(Color online) Comparison of the correction results with the target, the conventional 2G + 1E, and the new 1G + 2E PSFs on the poly layer of the 6T-SRAM cell. The overall appearances of the calculated pattern contours obtained from the target, the conventional 2G + 1E, and the new 1G + 2E PSFs at the (a) 32-, (b) 15-, and (c) 8-nm HP nodes. The CJLE (depicted with inward-pointing open arrows) and the LES (depicted with inward-pointing dotted arrows) of the driver transistor at the (d) 32-, (e) 15-, and (f) 8-nm HP nodes, which all demonstrate smaller deviation from the target PSF with the new PSF than the conventional PSF.

Tables

Generic image for table
TABLE I.

Information of 6T-SRAM cell circuit layouts at the 32, 15, and 8 nm HP nodes (Ref. 44 ).

Generic image for table
TABLE II.

Optimal coefficients and the LOGNSSE PIs of the conventional and new PSFs with different parametric forms fitted to the target PSFs at three different resist thicknesses on a silicon substrate at 5 keV with a zero-width beam size.

Generic image for table
TABLE III.

Quantitative indexes simulated with the target, the conventional 2G + 1E, and the new 1G + 2E PSFs in patterning prediction on the poly layer of the 6T-SRAM cell at three different HP nodes.

Generic image for table
TABLE IV.

Deviation of the two parametric PSFs from the target PSF in patterning prediction on the poly layer of the 6T-SRAM cell at three different HP nodes and the improvement ratio of the new 1G + 2E PSF to the conventional 2G + 1E PSF.

Generic image for table
TABLE V.

Effectiveness and thus requirement for applying the model-based PEC approach with shape modification and the improvement ratio of the quantitative indexes after PEC to those before PEC at the three HP nodes with the target PSF.

Generic image for table
TABLE VI.

Quantitative indexes simulated with the target, the conventional 2G + 1E, and the new 1G + 2E PSFs in PEC on the poly layer of the 6T-SRAM cell at three different HP nodes.

Generic image for table
TABLE VII.

Deviation of the two parametric PSFs from the target PSF in PEC on the poly layer of the 6T-SRAM cell at three different HP nodes and the improvement ratio of the new 1G + 2E PSF to the conventional 2G + 1E PSF.

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/content/avs/journal/jvstb/31/2/10.1116/1.4790655
2013-02-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4790655
10.1116/1.4790655
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