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Chamber conditioning process development for improved inductively coupled plasma reactive ion etching of GaAs/AlGaAs materials
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10.1116/1.4792839
/content/avs/journal/jvstb/31/2/10.1116/1.4792839
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4792839

Figures

Image of FIG. 1.
FIG. 1.

(Color online) SCOWL device design cross section.

Image of FIG. 2.
FIG. 2.

(Color online) Scanning electron micrograph of a completed SCOWL device ridge in cross section. This sample was processed utilizing the optimized etch process with chamber conditioning.

Image of FIG. 3.
FIG. 3.

(Color online) Schematic representation of the SCOWL fabrication sequence.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic representation of the Samco etch tool chamber design. (Used with permission by Samco, Inc.).

Image of FIG. 5.
FIG. 5.

(Color online) Measured GaAs etch rate as a function of etch test run number for ICP-RIE runs performed before implementation of a chamber conditioning procedure. Each data point is for a sample processed immediately after system use for a chamber clean or InP etching.

Image of FIG. 6.
FIG. 6.

(Color online) Measured GaAs etch rate as a function of chamber conditioning time following a chamber clean (♦) or an InP etch (▲).

Image of FIG. 7.
FIG. 7.

(Color online) Measured SCOWL device wafer etch rate as a function of etch test run number for samples sequentially processed with no tool interruptions immediately following implementation of a chamber conditioning procedure.

Image of FIG. 8.
FIG. 8.

(Color online) Measured SCOWL device wafer etch rate as a function of system run number before and after implementation of chamber conditioning procedures. Each data point represents a device wafer processed immediately after system use for a chamber clean or InP etching.

Image of FIG. 9.
FIG. 9.

EDAX analysis of chamber wall deposition after system use for InP etching, displaying relative intensity as a function of x-ray energy.

Image of FIG. 10.
FIG. 10.

EDAX analysis of chamber wall deposition after a chamber cleaning procedure, displaying relative intensity as a function of x-ray energy.

Image of FIG. 11.
FIG. 11.

EDAX analysis of chamber wall deposition after a chamber conditioning procedure, displaying relative intensity as a function of x-ray energy.

Image of FIG. 12.
FIG. 12.

(Color online) Measured SCOWL device wafer final etch depth as a function of fabrication time, over a 40 month period, highlighting the impact of ICP-RIE improvements on SCOWL process control. A chamber conditioning procedure was implemented in month 10.

Tables

Generic image for table
TABLE I.

Standard GaAs ICP-RIE process parameters.

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TABLE II.

Chamber clean etch step-by-step process details.

Generic image for table
TABLE III.

Comparison of mean etch rate and standard deviation before and after addition of a chamber conditioning step.

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/content/avs/journal/jvstb/31/2/10.1116/1.4792839
2013-02-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chamber conditioning process development for improved inductively coupled plasma reactive ion etching of GaAs/AlGaAs materials
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4792839
10.1116/1.4792839
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