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Band offsets of metal–oxide–semiconductor capacitor with HfLaTaO/HfSiO stacked high-k dielectric
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10.1116/1.4792843
/content/avs/journal/jvstb/31/2/10.1116/1.4792843
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4792843
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Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of (a) Hf 4f, (b) La 3d3 and La 3d5, and (c) Ta 4f of HfLaTaO dielectrics performed at 850 °C in N2 ambient for 45 s.

Image of FIG. 2.
FIG. 2.

(a) Measured HFCV (100 kHz) curves of MOS capacitor with an HfLaTaO/IL stacked dielectrics. The dielectric was carried out at 850 °C in N2 ambient for 45 s. (b) HRTEM images of Ta/HfLaTaO/IL/P-Si(100) stacked structures.

Image of FIG. 3.
FIG. 3.

Flatband voltage (Vfb) vs EOT plots of MOS capacitors with various thicknesses of HfLaTaO dielectrics.

Image of FIG. 4.
FIG. 4.

Tauc's plot of HfLaTaO/quartz substrate structure annealed at 850 °C for 45 s. The solid lines are a fit of the Tauc curves. The optical band gap (Egopt) was determined by extrapolation of a linear part of the curve to intercept the energy axis (αhυ = 0).

Image of FIG. 5.
FIG. 5.

(a) Electric-field-dependent Schottky plots of a Ta/HfLaTaO/IL/P-Si(100) structured MOS capacitor. (b) ln (J/T2) vs 1000/T characteristic of MOS capacitor with an HfLaTaO/IL stacked dielectric. (c) Schottky barrier height extracted from the slope of ln(J/T2) vs 1/kT curves at each specific electric field, as a function of the square root of the electric field.

Image of FIG. 6.
FIG. 6.

Band offsets of the MOS capacitor with a Ta/HfLaTaO/HfSiO/P-Si(100) stacked structure. The VBO and the CBO of HfSiOx and Si are 3.5 and 2.4 eV, respectively (Ref. 30 ).

Image of FIG. 7.
FIG. 7.

Typical HFCV hysteresis characteristics of MOS capacitor with an HfLaTaO/HfSiO stacked dielectric. HFCV sweep loops were performed at ±1.5 V.

Image of FIG. 8.
FIG. 8.

(a) HFCV characteristics measured before and after CVS at Edi = −2.1 MV/cm [Edi = (Vg − Vfb)/tphy] for 1000 and 5000 s of MOS capacitors with an HfLaTaO/HfSiO stacked dielectric. (b) Positive oxide trapped charges as a function of stress time in HfLaTaO/HfSiO stacked dielectric during CVS with stress field (Edi) of −2.1 MV/cm. Results were shown relative to the fresh capacitor.

Image of FIG. 9.
FIG. 9.

Number of stress-induced interface states (ΔDit) as a function of stress time (s) in HfLaTaO/HfSiO stacked dielectric during CVS. Results were shown relative to the fresh capacitor.

Image of FIG. 10.
FIG. 10.

Normalized stress-induced leakage current {SILC = [(Jg − J0)/J0]} spectrum as a function of injected charge (Qinj) for capacitor with an HfLaTaO/HfSiO stacked dielectric at the stress field Edi. The stress electrical field [Edi = (Vg − Vfb)/tphy] is −2.1 MV/cm.

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/content/avs/journal/jvstb/31/2/10.1116/1.4792843
2013-02-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band offsets of metal–oxide–semiconductor capacitor with HfLaTaO/HfSiO stacked high-k dielectric
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4792843
10.1116/1.4792843
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