(Color online) Room temperature electrical measurements of carbon-free and standard Pt interconnects. (a) 2-point I-V curves for a Pt interconnect deposited using the Pt(PF3)4 precursor and (CH3)3Pt(CPCH3) precursor. The left (black) y-axis corresponds to the carbon-free Pt while the right (red) y-axis corresponds to the standard Pt. Insets are SEM images of the carbon-free Pt (top) and standard Pt (bottom) interconnects deposited across four Au/Ni contact pads. Scale bar in both is 5 μm. (b) Scatter plot showing the distribution of resistivities calculated for several devices deposited under identical conditions. Right hand (red) y-axis corresponds to standard Pt and the left hand (black) y-axis corresponds to the carbon-free Pt. (c) TEM cross-section micrograph of a carbon-free Pt interconnect. Scale bar is 30 nm. stPt-EBID is standard Pt–electron beam induced deposition. C-EBID is carbon-electron beam induced deposition.
(Color online) Electrical transport measurements performed on carbon-free and standard Pt interconnects. (a) I-V measurements recorded at higher applied voltages for standard Pt (open red circles) and carbon-free Pt (solid black triangles) interconnects. The rapid drop in current around 12 V for both interconnects is due to electrical breakdown of the wire. (b) SEM image showing the point of breakdown of the wire between the two inner electrodes. Scale bar is 1 μm.
(Color online) I-V measurements of Pt interconnects before and after annealing. (a) I-V curve for a standard Pt interconnect before and after annealing under nitrogen for 1 min. (b) I-V curve for carbon-free Pt interconnect before and after annealing under nitrogen for 1 min.
(Color online) Cross-sectional TEM micrograph and EELS analysis of carbon-free interconnect. (a) Low-resolution cross-sectional TEM micrograph of a carbon-free wire deposited on Au/Ni electrode (b) EELS map taken along the blue arrow shown in (a).
(Color online) Transmission electron micrographs and diameter distributions of platinum particles deposited using Pt(PF3)4. (a) TEM micrograph of Pt particles before in-situ TEM annealing at 250 °C. (b) TEM micrograph of Pt particles after in-situ TEM annealing at 250 °C. Scale bars in (a) and (b) are 50 nm. (c) Diameter distribution of Pt particles before and after annealing. The distribution shows a clear increase in particle size after annealing, suggesting the sintering of particles together which can be correlated to the decrease in resistivity after annealing. (d) Lorentzian fit to the distribution in (c), which highlights the difference in particle sizes more clearly.
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