1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Bound states within the notch of the HfO2/GeO2/Ge stack
Rent:
Rent this article for
USD
10.1116/1.4794378
/content/avs/journal/jvstb/31/2/10.1116/1.4794378
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4794378

Figures

Image of FIG. 1.
FIG. 1.

Notch at the interface of IL and high-κ dielectric (after Lucovsky et al. 10 ).

Image of FIG. 2.
FIG. 2.

Energy band diagram of HfO2/GeO2 gate stack showing typical eigenstates. The bound states are only those localized in the IL region.

Image of FIG. 3.
FIG. 3.

(Color online) Energy states calculated at oxide voltage of 1.9 V illustrating the bound and unstable states.

Image of FIG. 4.
FIG. 4.

(Color online) Number of bound states in the 1-D notch as a function of IL thickness and oxide voltage for high-κ dielectric thickness of (a) 4 nm and (b) 2 nm.

Image of FIG. 5.
FIG. 5.

(Color online) Number of bound states in the 3-D structure as a function of IL thickness and oxide voltage for high-κ dielectric thickness of (a) 4 nm and (b) 2 nm.

Image of FIG. 6.
FIG. 6.

(Color online) Average occupancy in the 3-D structure as a function of IL thickness and oxide voltage for high-κ dielectric thickness of (a) 4 nm and (b) 2 nm.

Tables

Generic image for table
TABLE I.

Values of parameters used in simulation.

Loading

Article metrics loading...

/content/avs/journal/jvstb/31/2/10.1116/1.4794378
2013-03-04
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bound states within the notch of the HfO2/GeO2/Ge stack
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/2/10.1116/1.4794378
10.1116/1.4794378
SEARCH_EXPAND_ITEM