1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Molecular beam epitaxial growth of ultralow absorption GaN high electron mobility transistor material on sapphire substrates for infrared transparent conductors
Rent:
Rent this article for
USD
10.1116/1.4769895
/content/avs/journal/jvstb/31/3/10.1116/1.4769895
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4769895
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Wafer averages for sheet resistivity vs 1-m absorption loss for initial GaN HEMT films grown on 3-in. sapphire substrates.

Image of FIG. 2.
FIG. 2.

Bubble plot with 19 1-m absorption measurements across a 3-in. GaN HEMT/sapphire wafer that was rotated during growth. The center of the wafer is with the vertical and horizontal displacements at 0 mm. The wafer average absorption is 0.08% with a standard deviation of ±0.02%. The sheet resistance of the wafer was 304 Ω/sq with a standard deviation of 1.6%.

Image of FIG. 3.
FIG. 3.

Charge-depth profile for a GaN HEMT with 4.2% absorption.

Image of FIG. 4.
FIG. 4.

Absorption measurements at different steps of epi removal for three GaN HEMT/sapphire wafers exhibiting significantly different starting absorptions. The wafers were first etched 1500 Å removing the AlGaN layer and top of the GaN buffer, then another 7000 Å of the GaN buffer was removed, and finally the rest of the epi was ground and polished off leaving the sapphire substrate.

Image of FIG. 5.
FIG. 5.

Oxygen and aluminum SIMS depth profiles for a GaN HEMT/sapphire sample with 4.2% absorption and a sample with 0.1% absorption. The aluminum profile identifies the location of the AlN nucleation layer on the sapphire substrate. The AlN thickness is exaggerated due to its slow sputter rate.

Image of FIG. 6.
FIG. 6.

Wafer averages for sheet resistivity vs absorption loss at 1 m for GaN HEMT films grown on 100-mm sapphire substrates using a two-step method for AlN growth.

Loading

Article metrics loading...

/content/avs/journal/jvstb/31/3/10.1116/1.4769895
2012-12-07
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxial growth of ultralow absorption GaN high electron mobility transistor material on sapphire substrates for infrared transparent conductors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4769895
10.1116/1.4769895
SEARCH_EXPAND_ITEM