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Molecular beam epitaxy of highly mismatched N-rich GaN1−xSbx and InN1−xAsx alloys
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10.1116/1.4774028
/content/avs/journal/jvstb/31/3/10.1116/1.4774028
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4774028
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Sb/Ga (a) and Ga/(N + Sb) (b) concentration ratios in the GaNSb layers measured by RBS as a function of the Sb flux during PA-MBE.

Image of FIG. 2.
FIG. 2.

(Color online) SIMS profile for Ga, N, and Sb at the center of a GaNSb layer.

Image of FIG. 3.
FIG. 3.

Typical cross-sectional TEM micrograph of an amorphous GaNSb layer grown on sapphire at ∼80–90  °C and a high Sb flux.

Image of FIG. 4.
FIG. 4.

(Color online) Energy dependence of the square of the absorption coefficient (α*hυ) for GaNSb layers, grown at different Sb fluxes.

Image of FIG. 5.
FIG. 5.

(Color online) Arsenic concentration (a) and In/(N + As) concentration ratio (b) in the InNAs layers measured by RBS as a function of the As flux during PA-MBE.

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/content/avs/journal/jvstb/31/3/10.1116/1.4774028
2013-01-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy of highly mismatched N-rich GaN1−xSbx and InN1−xAsx alloys
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4774028
10.1116/1.4774028
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