(Color online) Sb/Ga (a) and Ga/(N + Sb) (b) concentration ratios in the GaNSb layers measured by RBS as a function of the Sb flux during PA-MBE.
(Color online) SIMS profile for Ga, N, and Sb at the center of a GaN1−xSbx layer.
Typical cross-sectional TEM micrograph of an amorphous GaN1−xSbx layer grown on sapphire at ∼80–90 °C and a high Sb flux.
(Color online) Energy dependence of the square of the absorption coefficient (α*hυ)2 for GaN1−xSbx layers, grown at different Sb fluxes.
(Color online) Arsenic concentration (a) and In/(N + As) concentration ratio (b) in the InNAs layers measured by RBS as a function of the As flux during PA-MBE.
Article metrics loading...
Full text loading...