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Structural and electrical characterization of InN, InGaN, and p-InGaN grown by metal-modulated epitaxy
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10.1116/1.4790865
/content/avs/journal/jvstb/31/3/10.1116/1.4790865
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4790865
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Transient RHEED intensity of InN grown by MME. Shaded regions indicate where the indium shutter was open.

Image of FIG. 2.
FIG. 2.

(Color online) Transient RHEED intensities of (a) sample A and (b) sample B. RHEED patterns during growth of (c) sample A and (d) sample B. Because of the low brightness of the RHEED pattern shown in (c), a contrast enhanced version is included as an inset.

Image of FIG. 3.
FIG. 3.

X-ray diffraction scans of (a) sample A, (b) sample B, and (c) a sample with identical conditions to sample B with the addition of a 10 nm GaN capping layer.

Image of FIG. 4.
FIG. 4.

(Color online) RHEED patterns recorded after growth and atomic force microscope morphologies of (a) sample A, (b) sample B, and (c) a sample with identical conditions to sample B with the addition of a 10 nm GaN capping layer.

Image of FIG. 5.
FIG. 5.

(Color online) X-ray diffraction scan waterfall plot and InGaN (0002) symmetric rocking curve FWHMs of InGaN films with indium compositions from x = 0.22 to 0.72.

Image of FIG. 6.
FIG. 6.

(Color online) AFM morphologies of InGaN films with indium compositions of (a) 22%, (b) 32%, (c) 46%, (d) 62%, and (e) 72%.

Image of FIG. 7.
FIG. 7.

(Color online) Hole concentrations and resistivities for a set of InGaN samples with changing indium compositions.

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/content/avs/journal/jvstb/31/3/10.1116/1.4790865
2013-02-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical characterization of InN, InGaN, and p-InGaN grown by metal-modulated epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4790865
10.1116/1.4790865
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