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MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers
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10.1116/1.4792516
/content/avs/journal/jvstb/31/3/10.1116/1.4792516
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4792516
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Figures

Image of FIG. 1.
FIG. 1.

Surface morphology of a series of growths on a 6-in., on-axis GaAs substrate: 5 × 5 m AFM images of (a) single-step GaSb M-buffer (300 Å nucleation layer plus 1 m GaSb); (b) an additional 3 m of GaSb (image enhanced to highlight the monolayer steps surrounding the dislocation at the center of the mounds); (c) and the full λ ∼ 4 m nBn photodetector structure; (d) the Nomarski contrast microscope image of the full nBn.

Image of FIG. 2.
FIG. 2.

(004) HRXRD spectra from the growths on 6-in., on-axis GaAs substrate of (a) a single-step 1 m thick GaSb M-buffer with a AlAsSb/AlAsSb SC-SLS layer, capped with 3 m of GaSb; and (b) the addition of the full λ∼ 4 m nBn photodetector structure.

Image of FIG. 3.
FIG. 3.

XTEM images of a full nBn grown on a single-step GaSb M-buffer with a AlAsSb/AlAsSb TS-SLS dislocation filtering layer, grown on a 6-in., on-axis GaAs substrate: the full epilayer stack on the right; close-ups on the left of the epi-substrate interface (bottom), dislocation propagation through and annihilated within the SLS (middle), and the nBn active layers demonstrating a clear absorber/barrier interface (top).

Image of FIG. 4.
FIG. 4.

Surface and structural characteristics from a series of growths on a 6-in., 2° miscut GaAs substate: 5 × 5 m AFM images of (a) the graded GaAsSb M-buffer, clearly showing the crosshatched morphology; (b) an additional 3 m of GaSb; (c) the full λ ∼ 4 m nBn photodetector structure; (d) XTEM image for the same epiwafer showing the full layer stack; and (e)Nomarski microscope image of the full nBn epiwafer surface.

Image of FIG. 5.
FIG. 5.

Excellent structural and optical uniformity of a full nBn detector grown on 6-in. GaAs: (a) 5-point HRXRD spectra; (c) 12-point 77 K PL peak λ and FWHM; (b) diagram depicting the orientation of the measurement steps across the wafer relative to its position in the substrate holder for MBE growth.

Image of FIG. 6.
FIG. 6.

(a) 150 K PL spectra of a nBn photodetector structure grown on 4-in. GaSb substrate, and on 6-in. GaAs substrates using various M-buffers, where Buffer [1] was single-step GaSb, [2a] was GaSb with the SC-SLS, [2b] used the TS-SLS, and [3] was the graded GaAsSb buffer; (b) sample J-V curves from the nBn grown on the single-step GaSb M-buffer with TS-SLS.

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/content/avs/journal/jvstb/31/3/10.1116/1.4792516
2013-02-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4792516
10.1116/1.4792516
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