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Growth and characterization of GaP/GaNP core/shell nanowires
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10.1116/1.4793476
    Supanee Sukrittanon1,a), YanJin Kuang (邝彦瑾)2 and Charles W. Tu3,b)
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093
    2 Department of Physics, University of California, San Diego, La Jolla, California 92093
    3 Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California, 92093 and Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093
    a) Electronic mail: ssukritt@ucsd.edu
    b) Electronic mail: ctu@ucsd.edu
    J. Vac. Sci. Technol. B 31, 03C110 (2013); http://dx.doi.org/10.1116/1.4793476
/content/avs/journal/jvstb/31/3/10.1116/1.4793476
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4793476

Figures

Image of FIG. 1.
FIG. 1.

SEM images of GaP NWs on Si(111): (a) and (d) at T = 585 °C (sample B), (b) and (e) at T = 600 °C (sample C), and (c) and (f) at T = 615 °C (sample E).

Image of FIG. 2.
FIG. 2.

SEM images of GaP NWs on Si(111): (a) at T = 515 °C (sample A) and (b) at T = 630 °C (sample E).

Image of FIG. 3.
FIG. 3.

(Color online) TEM images of (a) GaP core and (b) GaNP shell show the twinning planes (red solid arrow) along the [111] NW growth direction.

Tables

Generic image for table
TABLE I.

Average diameters and lengths of NWs for samples A–E, which grew at T ranging from 515 to 630 °C.

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/content/avs/journal/jvstb/31/3/10.1116/1.4793476
2013-02-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characterization of GaP/GaNP core/shell nanowires
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4793476
10.1116/1.4793476
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