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Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices
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10.1116/1.4793764
/content/avs/journal/jvstb/31/3/10.1116/1.4793764
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4793764
/content/avs/journal/jvstb/31/3/10.1116/1.4793764
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/content/avs/journal/jvstb/31/3/10.1116/1.4793764
2013-02-27
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4793764
10.1116/1.4793764
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