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Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices
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10.1116/1.4793764
/content/avs/journal/jvstb/31/3/10.1116/1.4793764
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4793764
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Figures

Image of FIG. 1.
FIG. 1.

Cross section (not to scale) of the investigated structures with the gate dielectric ZrO. Ti/Al provides the top electrode in all devices. (a)MISdevice on highly doped n-GaN with Ti/Al nonalloyed ohmic front contact. (b) MIM structure on highly doped n-Si with TiN bottom electrode. (c) MIS capacitor on H-terminated p-Si with Al backside contact.

Image of FIG. 2.
FIG. 2.

(Color online) Gracing incidence x-ray diffraction pattern for ZrO stacks (a) simultaneously deposited ZrO on GaN (thick solid traces) and TiN (thin solid traces) and (b) different ZrO thickness on p-Si. The ZrO monoclinic phase (dark (blue online) arrows) emerges for increasing oxide film thickness. Light (orange online) arrows indicate the tetragonal ZrO phase.

Image of FIG. 3.
FIG. 3.

Background corrected, min–max normalized XPS spectra of ZrO on GaN and TiN. (a) Ga 2p core levels originating from the GaN substrate and ZrO deposited on GaN. (b) Ti 3d core levels of TiN and ZrO deposited on TiN. For both substrates, the investigated ZrO thicknesses were identical and ranged from submonolayer to monolayer.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Capacitance (per area) vs voltage (CV) traces of ZrO on different substrate materials (voltage applied on top electrode). ZrO on TiN shows an MIM behavior, whereas an MIS behavior is observed for ZrO on H-terminated p-Si and n-GaN. (b) CV curves of ZrO films of different thicknesses on n-GaN. Inset displays an example of the CV hysteresis of the 14 nm sample in linear scale.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Comparison of gate leakage currents of ZrO thin films on TiN, highly doped n-type GaN and H-terminated p-Si. (b) CV curves of ZrO films with different thicknesses on n-GaN.

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/content/avs/journal/jvstb/31/3/10.1116/1.4793764
2013-02-27
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4793764
10.1116/1.4793764
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