InxGa1−xN grown on sapphire by ENABLE under N-rich conditions (a), metal-rich conditions (b), and after prolonged growth under metal-rich conditions (c).
(Color online) (a) XRD measurements (coupled ϴ/2 ϴ) for an InxGa1−xN film with 24% In content grown on sapphire and (b) corresponding band edge PL measurements.
(Color online) Carrier concentration and mobility measurements vs N flow rate for a series of InxGa1−xN films grown on sapphire with In contents in the 33–40% range grown at 450 °C (a), 550 °C (b), and 600 °C (c).
Carrier mobility vs concentration for a series of undoped In-rich InGaN films grown on sapphire with In contents in the 30–40% range.
Acceptor concentrations measured by ECV for a Mg doped InxGa1−xN film grown on sapphire with an ∼20% In content.
(Color online) Donor and acceptor concentrations measured by ECV for an Mg doped InxGa1−xN film grown on sapphire with an ∼40% In content.
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