1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
In-rich InGaN thin films: Progress on growth, compositional uniformity, and doping for device applications
Rent:
Rent this article for
USD
10.1116/1.4794788
/content/avs/journal/jvstb/31/3/10.1116/1.4794788
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4794788
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

InGaN grown on sapphire by ENABLE under N-rich conditions (a), metal-rich conditions (b), and after prolonged growth under metal-rich conditions (c).

Image of FIG. 2.
FIG. 2.

(Color online) (a) XRD measurements (coupled ϴ/2 ϴ) for an InGaN film with 24% In content grown on sapphire and (b) corresponding band edge PL measurements.

Image of FIG. 3.
FIG. 3.

(Color online) Carrier concentration and mobility measurements vs N flow rate for a series of InGaN films grown on sapphire with In contents in the 33–40% range grown at 450 °C (a), 550 °C (b), and 600 °C (c).

Image of FIG. 4.
FIG. 4.

Carrier mobility vs concentration for a series of undoped In-rich InGaN films grown on sapphire with In contents in the 30–40% range.

Image of FIG. 5.
FIG. 5.

Acceptor concentrations measured by ECV for a Mg doped InGaN film grown on sapphire with an ∼20% In content.

Image of FIG. 6.
FIG. 6.

(Color online) Donor and acceptor concentrations measured by ECV for an Mg doped InGaN film grown on sapphire with an ∼40% In content.

Loading

Article metrics loading...

/content/avs/journal/jvstb/31/3/10.1116/1.4794788
2013-03-08
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In-rich InGaN thin films: Progress on growth, compositional uniformity, and doping for device applications
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4794788
10.1116/1.4794788
SEARCH_EXPAND_ITEM