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Epitaxial growth of ZnTe on GaSb(100) using in situ ZnCl2 surface clean
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10.1116/1.4796108
/content/avs/journal/jvstb/31/3/10.1116/1.4796108
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4796108
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Nomarski micrograph for ZnTe/GaAs grown with (a) as received substrate, (b) substrate etched in HCl prior to loading, and (c) substrate etched in HCl prior to loading and etched with ZnCl during the thermal clean step. (d) is a height contour plot of (b), showing the oval defects to be pits.

Image of FIG. 2.
FIG. 2.

(Color online) (a) SEM image of a region containing an oval defect on an as-received wafer that was heated under vacuum until the appearance of a spotty RHEED pattern. The line across the SEM image illustrates the region of the energy dispersive x ray line scan (b). Sb depletion is significant near the center of the oval defect.

Image of FIG. 3.
FIG. 3.

(a) Low magnification and (b) high magnification HRTEM micrograph of ZnTe/GaSb showing an abrupt interface between ZnTe and GaSb substrates; (c) HR-STEM data of the ZnTe/GaSb interface.

Image of FIG. 4.
FIG. 4.

(Color online) STEM-EDS line-scan data across the ZnTe/GaSb interface.

Image of FIG. 5.
FIG. 5.

Rocking curve data for ZnTe/GaAs grown with (a) as received substrate, (b) substrate etched in HCl prior to loading, and (c) substrate etched in HCl prior to loading and etched with ZnCl during the thermal clean step.

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/content/avs/journal/jvstb/31/3/10.1116/1.4796108
2013-03-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of ZnTe on GaSb(100) using in situ ZnCl2 surface clean
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4796108
10.1116/1.4796108
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