(Color online) (a) Experimental (dotted line) and modeled (solid line) reflection for a 1.1 μm thick InAs film n-type doped at 9.4 × 1019 cm−3. Modeled data used λp = 5.48 μm and Γ = 1.3 × 1013 Hz. (b) Real (solid line) and imaginary (dashed line) parts of the dielectric constant, determined using the Drude model and the parameters obtained from the fitting of (a).
(Color online) Real (a) and imaginary (b) parts of the dielectric function for doped InAs films as a function of carrier concentration. All films are grown with no buffer layer, a growth rate of 0.75 μm/h, and a thickness of 1 μm.
(Color online) Real (a) and imaginary (b) parts of the dielectric function for doped InAs films in which the growth rate was varied from 0.72 μm/h (black squares) to1.0 μm/h (blue triangles) to 2.0 μm/h (red circles).
(Color online) Root mean square surface roughness versus growth rate as determined by atomic force microscopy. The red dot corresponds to the sample with low doping density, while the black squares all have similar high doping densities. 10 × 10 μm AFM images are shown for three representative samples with the color scale from 0 to 500 nm.
(Color online) Real (a) and imaginary (b) parts of the dielectric function for doped InAs films with no buffer layer (blue squares), a 1 μm InAs buffer layer (orange circles), a 1 μm metamorphic graded InGaAs buffer layer (purple diamonds), or grown directly on an InAs substrate (green triangles).
(Color online) Experimental (symbol) and loss-corrected modeled (solid) transmission through 1.5 μm thick doped InAs films (n ∼ 4.5 × 1019 cm−3) grown directly on the GaAs substrate (black), on a 1 μm thick undoped InAs buffer layer (red squares) and on a 1 μm thick undoped graded InGaAs buffer layer (blue triangles). Modeled data are loss-corrected by scaling with a wavelength-independent scaling parameter (A) and a thin transitional layer of effective thickness Lo .
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