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Epitaxial growth of engineered metals for mid-infrared plasmonics
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10.1116/1.4797487
/content/avs/journal/jvstb/31/3/10.1116/1.4797487
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4797487
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Experimental (dotted line) and modeled (solid line) reflection for a 1.1 m thick InAs film n-type doped at 9.4 × 10 cm. Modeled data used λ = 5.48 m and Γ = 1.3 × 10 Hz. (b) Real (solid line) and imaginary (dashed line) parts of the dielectric constant, determined using the Drude model and the parameters obtained from the fitting of (a).

Image of FIG. 2.
FIG. 2.

(Color online) Real (a) and imaginary (b) parts of the dielectric function for doped InAs films as a function of carrier concentration. All films are grown with no buffer layer, a growth rate of 0.75 m/h, and a thickness of 1 m.

Image of FIG. 3.
FIG. 3.

(Color online) Real (a) and imaginary (b) parts of the dielectric function for doped InAs films in which the growth rate was varied from 0.72 m/h (black squares) to1.0 m/h (blue triangles) to 2.0 m/h (red circles).

Image of FIG. 4.
FIG. 4.

(Color online) Root mean square surface roughness versus growth rate as determined by atomic force microscopy. The red dot corresponds to the sample with low doping density, while the black squares all have similar high doping densities. 10 × 10 m AFM images are shown for three representative samples with the color scale from 0 to 500 nm.

Image of FIG. 5.
FIG. 5.

(Color online) Real (a) and imaginary (b) parts of the dielectric function for doped InAs films with no buffer layer (blue squares), a 1 m InAs buffer layer (orange circles), a 1 m metamorphic graded InGaAs buffer layer (purple diamonds), or grown directly on an InAs substrate (green triangles).

Image of FIG. 6.
FIG. 6.

(Color online) Experimental (symbol) and loss-corrected modeled (solid) transmission through 1.5 m thick doped InAs films (n ∼ 4.5 × 10 cm) grown directly on the GaAs substrate (black), on a 1 m thick undoped InAs buffer layer (red squares) and on a 1 m thick undoped graded InGaAs buffer layer (blue triangles). Modeled data are loss-corrected by scaling with a wavelength-independent scaling parameter (A) and a thin transitional layer of effective thickness .

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/content/avs/journal/jvstb/31/3/10.1116/1.4797487
2013-03-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of engineered metals for mid-infrared plasmonics
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4797487
10.1116/1.4797487
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