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Inducing a junction in n-type InxGa(1−x)N
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10.1116/1.4797489
/content/avs/journal/jvstb/31/3/10.1116/1.4797489
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4797489

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic representation of an induced junction. The material on the left is a p-type window layer. The layer in the middle is an extremely thin high bandgap material. The material on the right is the absorber and actual induced junction.

Image of FIG. 2.
FIG. 2.

(Color online) Results from Sentaurus for band alignments of a GaN/AlN/InGaN. Device is at equilibrium.

Image of FIG. 3.
FIG. 3.

(Color online) Double crystal ω-2θ rocking curves of ENB-775 (rounded peaks with greater intensity—experimental, sharper peaks with less intensity—calculated) in the vicinity of InGaN and GaN (0002) reflections. −1SL peak indicates an unintentional modulation of In composition in InGaN layer with the period ∼5.5 nm. The shoulder on the left side of InGaN (0002) peak is related to the small gradient of composition in InGaN layer on the initial stage of deposition.

Image of FIG. 4.
FIG. 4.

(Color online) Triple crystal ω rocking curves of ENB-775, measured on the maximum of GaN(0002) (weaker) and InGaN(0002) (stronger) peaks. FWHM of these peaks is 740 and 1140 arc/s, accordingly.

Image of FIG. 5.
FIG. 5.

(Color online) Double crystal ω-2θ rocking curves of ENB-746 (rounded peaks with greater intensity—experimental, sharper peaks with less intensity—calculated) in the vicinity of InGaN and GaN (0002) reflections. −1SL peak indicates an unintentional modulation of In composition in InGaN layer with the period ∼5.35 nm. The shoulder on the right side of GaN (0002) peak is related to the thin AlGaN layer, created on the top of the GaN buffer layer.

Image of FIG. 6.
FIG. 6.

(Color online) Triple crystal ω rocking curves of ENB-746, measured on the maximum of GaN(0002) (sharper) and InGaN(0002) (broader) peaks. FWHM of these peaks is 455 and 1265 arc/s, accordingly.

Image of FIG. 7.
FIG. 7.

(Color online) Photoluminescence of ENB-775. Probing laser power of 7 mW. Collection time was 1 s. Gaussian peaks are estimated deconvolutions of original spectrum.

Image of FIG. 8.
FIG. 8.

(Color online) Photoluminescence of ENB-746. Probing laser power of 7 mW. Collection time was 1 s. Gaussian peaks are estimated deconvolutions of original spectrum.

Tables

Generic image for table
TABLE I.

Band gaps and efficiencies for 3J and 4J using AM1.5D.

Generic image for table
TABLE II.

InGaN composition for tandem junctions.

Generic image for table
TABLE III.

Sample growth parameters.

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/content/avs/journal/jvstb/31/3/10.1116/1.4797489
2013-04-10
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inducing a junction in n-type InxGa(1−x)N
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4797489
10.1116/1.4797489
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