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Direct integration of subwavelength structure on a GaAs solar cell by using colloidal lithography and dry etching process
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10.1116/1.4798410
/content/avs/journal/jvstb/31/3/10.1116/1.4798410
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4798410

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Fabrication processes to realize GaAs solar cells monolithically integrated with SWS ARC.

Image of FIG. 2.
FIG. 2.

Top view and cross-sectional SEM images of the SWS fabricated by etching for (a) 10, (b) 11, and (c) 12 min.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Measured total reflectance as a function of the incident wavelength and specular reflectance with respect to the incident angle for InGaP surfaces with and without the SWS. (b) Measured EQE of GaAs solar cells with and without the SWS.

Image of FIG. 4.
FIG. 4.

(Color online) Current–voltage characteristics of GaAs solar cells with SWS-B and SWS-C and without SWS.

Tables

Generic image for table
TABLE I.

Device parameters of the solar cells with SWS-B and SWS-C and without SWS.

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/content/avs/journal/jvstb/31/3/10.1116/1.4798410
2013-04-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct integration of subwavelength structure on a GaAs solar cell by using colloidal lithography and dry etching process
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4798410
10.1116/1.4798410
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