(Color online) (a) Energy band diagram of the CBIRD structure, showing the conduction and valence band edges and the Fermi level under zero bias. (b) Long-wave infrared CBIRD structure.
(Color online) (a) 80 μm × 80 μm and (b) 20 μm × 20 μm AFM scans of the CBIRD structure.
XRD scan of the CBIRD structure near the GaSb (004) reflection, showing three distinct superlattices: the absorber (ABS), the hole barrier (HB), and the electron barrier (EB).
(Color online) (a) Photoluminescence of the CBIRD structure at 77 K. (b) PL frequency response curves of the InAs/GaSb superlattice to a small sine wave modulation for different continuous-wave excitation powers. From the dependence of the inverse lifetime with excess carrier density (see inset), the minority carrier lifetime is obtained by extrapolating the linear dependence to zero excess carrier density. The minority carrier lifetime for this superlattice is approximately 20 ns.
(Color online) Dark current density of the LWIR CBIRD structure at 77 K. Dark current density is less than j < 1 × 10−5 A/cm2 at applied biases up to Vb = 0.36 V.
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