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Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure
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10.1116/1.4798612
/content/avs/journal/jvstb/31/3/10.1116/1.4798612
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4798612

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Sensor chip mounted on a carrier. (b) Optical micrograph AlGaN/GaN HEMT based sensing diodes.

Image of FIG. 2.
FIG. 2.

(Color online) Forward I–V characteristics at 25 °C of the HEMT in pure N and in a 1% H balanced with nitrogen.

Image of FIG. 3.
FIG. 3.

(Color online) Time-dependent AlGaN/GaN HEMT based diode sensor forward current and first order derivative of the diode current with respect to time at a fixed voltage of 2 V and 25 °C when switching the ambience from N to 1% H balanced with nitrogen.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Time-dependent AlGaN/GaN HEMT based diode sensor forward current. (b) First order derivative of the diode current with respect to time at a fixed voltage of 2 V and 25 °C when switching the ambience from N to different H concentrations balanced with nitrogen.

Image of FIG. 5.
FIG. 5.

(Color online) (a) First order derivative of the diode current biased at 2 V as a function of the hydrogen concentration at 25 °C. (b) First order derivative of the diode current biased at 1.4 V as a function of the hydrogen concentration at 30 °C.

Image of FIG. 6.
FIG. 6.

(Color online) (a) First order derivative of the diode current as a function of the hydrogen concentration at 30, 45, and 60 °C with a fixed bias voltage of 1.4 V. (b) Arrhenius plot of the first order derivative of the diode current as a function of the ambient temperature.

Tables

Generic image for table
TABLE I.

Response time for different types of semiconductor hydrogen sensors.

Generic image for table
TABLE II.

Response times of the HEMT based diode sensors for different concentrations of hydrogen ambiences.

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/content/avs/journal/jvstb/31/3/10.1116/1.4798612
2013-04-03
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4798612
10.1116/1.4798612
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