(Color online) Room temperature PL intensity measured at 300 K for 0.5 μm thick GaSb layers grown at (a) different substrate temperatures with Sb/Ga ∼ 5.5 and (b) various Sb/Ga BEP ratios grown at 454 °C.
FWHM of the first order T2SL peak, lattice mismatch with respect to substrate, and thickness of individual T2SL period as function of growth temperature.
HRXRD spectra of the T2SL with the same composition grown on (111)B GaSb (top) and (100)GaSb (bottom) substrates. Insets illustrate the enlarged first order T2SL satellite peaks.
Cross-section TEM image of 100p T2SL grown on (111)B GaSb substrate.
Room-temperature PL spectrum of MWIR T2SL detector material grown in GaSb (111)B substrate. The inset shows the heterostructure schematic of the T2SL detector.
(Color online) Temperature-dependent spectral response of (111) MWIR detectors measured at optimal bias (−50 mV).
(Color online) Dark current density of (111) MWIR detector measured in (70–295)K temperature range at −50 mV of applied bias. Inset shows the dark current density of the detector measured at 295 K.
(Color online) Zero bias spectral response measured at 77 K for two detector structures with the same design and T2SL composition grown on GaSb (100) and GaSb (111)B substrates. The inset illustrates difference of λ100% cut-off for both devices measured at (77–295)K temperature range. A red shift of 1.7 μm (at 295 K) was observed with respect to the detector grown on the GaSb (100) substrate.
(Color online) Absolute values of dark current densities measured at 295 K for MWIR pin detectors grown on (111) and (100) GaSb substrates.
(Color online) Comparison of dark current densities of (111) and (100) MWIR detectors at the same devices' cut-off wavelength.
(Color online) Bias-dependent responsivity and QE of the T2SL detector grown on the GaSb (111)B substrate measured within the (77–295)K temperature range at 4 μm.
High-temperature performance comparison of the T2SL MWIR detector grown on the GaSb (111)B substrate with detectors grown on GaSb (100) substrates and operating at the same wavelength range.
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