Experimental setup for the AP on the GEN II MBE system.
AP spectra of each Terfenol component. The Auger spectrum intensity is vertically offset by 20% for each successive element from Fe to Dy for clarity.
(Color) Various AP spectra of a Tb layer overgrown up to 10% of a monolayer of Dy measured in 2% increments.
(Color) Various AP Auger spectra of a Tb layer overgrown up to 100% of a monolayer of Dy over a broad energy range.
XPS spectrum of a Terfenol-D layer exhibiting a high concentration of oxygen. The XPS survey data also show about a +1 eV chemical shift of each of the labeled metal lines due to oxidation. Each sample was capped with Al prior to air exposure so this oxidation is a result of oxidation in the MBE system.
(Color online) Auger spectra of the Tb before and after 30 h in the growth chamber measured using the two different electron guns. From top to bottom: RHEED 30 h after and immediately after growth, near normal electron gun 30 h after and immediately after growth, respectively.
(Color online) RHEED generated AP Auger spectra of the Tb grown at 1220 °C, 7.2 × 10−9 Torr BEP which does not show a noticeable level oxygen contamination (bottom). Oxygen is detected in the film grown at 1300 °C, 3.9 × 10−8 Torr BEP (top).
(Color online) SIMS depth profile of each Terfenol component grown on Si and capped in Al. From a to c are each film with estimated thicknesses: Tb 970 Å, Dy 1370 Å, Fe 1500 Å each with a 350 Å Al cap. The vertical bar shows the substrate/film interface. Each depth profile was configured to detect the metal-oxide rather than elemental oxygen.
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