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Strain- and kinetically induced suppression of phase separation in MBE-grown metastable and unstable GaInAsSb quaternary alloys for mid-infrared optoelectronics
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10.1116/1.4799352
/content/avs/journal/jvstb/31/3/10.1116/1.4799352
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4799352
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Room temperature normalized PL for InGaAsSb nominally lattice-matched to a GaSb substrate with indium concentration varying from 0 to 1 (wavelength range: 1.7–4.9 m) (Ref. ).

Image of FIG. 2.
FIG. 2.

Heterostructure of samples grown in this study. The first three layers are buffer layers for obtaining a smooth growth surface (Ref. ). The three period superlattice is for fine tuning growth rates with RHEED oscillations to obtain alloy concentrations accurately. The GaInAsSb layer is the test layer, surrounded by AlAsSb to confine carriers in photoluminescence measurements, and the 5 nm GaSb cap is to prevent oxidation of the AlAsSb layer.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Spectrally resolved, room temperature PL for GaInAsSb for different growth temperatures. Optical pump intensity is 7 W/cm at 980 nm. (b) Integrated PL vs growth temperature for GaInAsSb. Points connected with a B-spline.

Image of FIG. 4.
FIG. 4.

(Color online) Room temperature PL and HRXRD alloy full width half maximum line widths versus growth temperature for GaInAsSb.

Image of FIG. 5.
FIG. 5.

(Color online) AFM images for GaInAsSb alloys that were grown at: (a) 375 °C (20 m × 20 m), (c) 435 °C (20 m × 20 m), (e) 515 °C (20 m × 20 m).

Image of FIG. 6.
FIG. 6.

(Color online) AFM images for GaInAsSb alloys with: (a) −9.3 × 10, (c) −1.9 × 10, (e) 2.7 × 10, (g) 3.9 × 10 strain, which were grown at 455 °C, and (b), (d), (f), (h) corresponding optical interferometer images over larger regions. The optical images have vertical resolution of 2 nm and are flat and featureless.

Image of FIG. 7.
FIG. 7.

(Color online) (a) Reciprocal map of GaInAsSb alloy with 1.9 × 10 strain, (b) simulation for 100% strain using Jordan Valley Peaksplit software.

Image of FIG. 8.
FIG. 8.

Optical interferometer image for GaInAsSb alloy with strain in excess of −9.5 × 10, which was grown at455 °C.

Image of FIG. 9.
FIG. 9.

(Color online) Integrated PL output vs. strain values for GaInAsSb alloys that were grown at 455 °C.

Image of FIG. 10.
FIG. 10.

(Color online) (a) Spectrally resolved, room temperature PL for GaInAsSb alloys that were grown at different temperatures. Optical pump intensity 7 W/cm at 980 nm. (b) Integrated PL output versus growth temperature. (c) HRXRD and PL line widths versus growth temperature. (d)Spectrally resolved, low temperature (77 K) PL for the stable and metastable alloys GaInAsSb and for GaInAsSb, respectively.

Image of FIG. 11.
FIG. 11.

(Color online) AFM images (20 m × 20 m) for GaInAsSb alloys that were grown at: (a) 380, (b) 420, (c) 450, and (d) 460 °C.

Image of FIG. 12.
FIG. 12.

(Color online) (a) Photo of GaInAsSb alloys grown on quarters of in. GaSb substrates at 450 °C with strain values 1.5 × 10, 1.8 × 10, 2.1 × 10, and 3.9 × 10 (from top to bottom). (b) AFM image for GaInAsSb (from inside circled region) with 1.5 × 10 strain, where material is very rough and spinoidally decomposed. AFM images from outside circled regions for samples with strain values (c) 1.5 × 10, (d) 1.8 × 10, (e) 2.1 × 10, (f) 3.8 × 10, where material is progressively smoother. (Note the pattern outside the circled region is a reflection of the grill at the top of the fumehood in which the photo was taken.)

Image of FIG. 13.
FIG. 13.

(Color online) (a) Spectrally resolved, room temperature PL forGaInAsSb alloys that were grown with differentstrain values at 450 °C. PL is from smooth areas in Fig. 11 . (b)Corresponding PL and X-ray line widths for samples with different strainvalues.

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/content/avs/journal/jvstb/31/3/10.1116/1.4799352
2013-04-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain- and kinetically induced suppression of phase separation in MBE-grown metastable and unstable GaInAsSb quaternary alloys for mid-infrared optoelectronics
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4799352
10.1116/1.4799352
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