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Fabrication of 3D charged particle trap using through-silicon vias etched by deep reactive ion etching
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10.1116/1.4799662
/content/avs/journal/jvstb/31/3/10.1116/1.4799662
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4799662

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Axially stacked wafers contain holes, hence form one tube with each of the holes (Ref. ).

Image of FIG. 2.
FIG. 2.

(Color online) Technique of photolithography.

Image of FIG. 3.
FIG. 3.

(Color online) Mask used during photolithography.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic diagram of DRIE with inductive coil which is not present in RIE.

Image of FIG. 5.
FIG. 5.

Hole characteristics measured using SEM.

Image of FIG. 6.
FIG. 6.

Slanting edges of etched oxide.

Image of FIG. 7.
FIG. 7.

Reactive ion etching result after 1 h of RIE with process pressure of 150 mT, RF power at 150 W, CF flow of 30 sccm, and O flow of 2 sccm. Oxide angle after RIE was closer to 90° as compared with earlier attempts of wet etching.

Image of FIG. 8.
FIG. 8.

Irregular wet etching of Cr mask.

Image of FIG. 9.
FIG. 9.

Example of an unsuccessful Cr lift off.

Image of FIG. 10.
FIG. 10.

(Color online) Examples of ripping effect: (a) Cr thin film sputtered on SU8 that is patterned on Si, (b) ripped Cr on Si after lift-off, (c) top view of wafer after lift off.

Image of FIG. 11.
FIG. 11.

Image bilayer.

Image of FIG. 12.
FIG. 12.

Example of scalloping in Bosch technique. (Dust particles appearing in the image should be neglected.)

Image of FIG. 13.
FIG. 13.

Base etch results in which temperature was −95 °C, pressure was 12 mT, total gas flow (SF + O) was 76 sccm, O percentage in gas was 7.9%, RF power was 3 W, and ICP power was 700 W.

Image of FIG. 14.
FIG. 14.

Result of calibration etches: (a) Higher pressure, (b) higher temperature than base recipe.

Image of FIG. 15.
FIG. 15.

Result of final etch recipe in which temperature was −90 °C, pressure was 14 mT, total gas flow (SF + O) was 76, O percentage in gas was 7.9%, RF power was 3 W, and ICP power was 700 W.

Image of FIG. 16.
FIG. 16.

Example of notching and bowing occuring in an etched sample.

Image of FIG. 17.
FIG. 17.

(a) Holes etched 306 μm in 120 min. (b) Trenches etched 358 μm in 120 min.

Image of FIG. 18.
FIG. 18.

(Color online) Stack of three bonded dies.

Tables

Generic image for table
TABLE I.

Results with higher pressure and higher temperature than the base variables after calibration etches.

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/content/avs/journal/jvstb/31/3/10.1116/1.4799662
2013-04-04
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of 3D charged particle trap using through-silicon vias etched by deep reactive ion etching
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4799662
10.1116/1.4799662
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