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Tungsten-based pillar deposition by helium ion microscope and beam-induced substrate damage
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10.1116/1.4800983
/content/avs/journal/jvstb/31/3/10.1116/1.4800983
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4800983
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) TEM bright-field image of five tungsten-based pillars sequentially deposited on an amorphous carbon rod by the HIM-GIS method for 120 s. The deposition parameters include: beam energy of 30 keV, defocus voltage of 0 V, WD of 10.5 mm, and beam current of 0.9 pA. (b) The diffraction pattern taken from the five tungsten-based pillars shown in (a).

Image of FIG. 2.
FIG. 2.

Typical HAADF-STEM images of tungsten-based pillars deposited on Si substrates by the HIM-GIS method for 60 s, deposited with a beam energy of (a) 30 keV and (b) 10 keV. The corresponding defocus voltage is shown next to each pillar. The WD is 10.5 mm, and beam current is 1.0 pA. (c) and (d) The diffraction patterns taken from the middle of the far-right pillars shown in (a) and (b), respectively.

Image of FIG. 3.
FIG. 3.

Beam energy and defocus voltage dependencies the (a) vertical growth rate, (b) pillar width, (c) volumetric growth rate, (d) columnar void width, and (e) Si blister height.

Image of FIG. 4.
FIG. 4.

(a) and (b) Magnified images of the far-right pillars shown in Figs. 2(a) and 2(b) , respectively. (c) and (d) The EDX spectra obtained at the points indicated by circled numbers in (a) and (b), respectively. HAADF-STEM images of Si substrates irradiated by a (e) 30-keV and (f) 10-keV helium ion beam for 60 s without gas injection.

Image of FIG. 5.
FIG. 5.

(a) Columnar void width and (b) Si blister height plotted as a function of volumetric growth rate.

Image of FIG. 6.
FIG. 6.

Typical HAADF-STEM image of a tungsten-based pillar deposited on a Si substrate by the HIM-GIS method for 60 s with a WD of 11.5 mm, beam energy of 30 keV, defocus voltage of 0 V, and beam current of 1.0 pA.

Image of FIG. 7.
FIG. 7.

(a) Vertical growth rate, (b) pillar width, (c) volumetric growth rate, (d) columnar void width, and (e) Si blister height plotted as a function of WD.

Image of FIG. 8.
FIG. 8.

(a) Typical HAADF-STEM image of tungsten-based pillars deposited on a Si substrate by the HIM-GIS method for 60 s with beam currents of 1.0–3.5 pA. The current used is indicated next to each pillar. The beam energy is 30 keV, defocus voltage is 0 V, and WD is 10.5 mm. (b) and (c) The magnified images of the pillars and pillar/substrate interfaces shown in (a), respectively.

Image of FIG. 9.
FIG. 9.

(a) Vertical growth rate, (b) pillar width, (c) volumetric growth rate, (d) columnar void width, and (e) Si blister height plotted as a function of beam current.

Image of FIG. 10.
FIG. 10.

Plots of the (a) columnar void width and (b) Si blister height as a function of volumetric growth rate.

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/content/avs/journal/jvstb/31/3/10.1116/1.4800983
2013-04-10
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tungsten-based pillar deposition by helium ion microscope and beam-induced substrate damage
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4800983
10.1116/1.4800983
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