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Wet chemical etching process for wafer scale isolation and interconnection of GaSb based device layers grown on GaAs substrates
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10.1116/1.4801008
/content/avs/journal/jvstb/31/3/10.1116/1.4801008
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4801008
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional view (schematic diagram) of a typical GaSb/GaAs MIMs structure (only two adjacent devices are shown).

Image of FIG. 2.
FIG. 2.

Etch profiles of GaSb measured using a Dektak 8 surface profiler at three different locations (on different cells across the wafer).

Image of FIG. 3.
FIG. 3.

Etch profiles of GaAs measured using a Dektak 8 surface profiler at three different locations (on different cells across the wafer).

Image of FIG. 4.
FIG. 4.

Etch rate for GaSb as a function of HO concentration in the etching solution KNa-tartrate:HCl:HO. The volume ratio ranges from 1:8:0.1 to 1:8:1.5 in 200 ml DI water.

Image of FIG. 5.
FIG. 5.

Etch depth for GaSb (a) and GaAs (b) as a function of etching time in KNa-tartrate solution and citric acid solution, respectively.

Image of FIG. 6.
FIG. 6.

3D surface views of the device isolation trenches created by the selective wet etching of GaSb/GaAs (a) and after the SiN depositing and etching (b). The vertical and horizontal dimensions of the etched features are indicated by the scales (bars) inserted in the figures.

Image of FIG. 7.
FIG. 7.

Series resistance between two adjacent devices (a) and the saturation current (b) extracted from the dark forward I-V characteristics of four representative devices across the wafer.

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/content/avs/journal/jvstb/31/3/10.1116/1.4801008
2013-04-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wet chemical etching process for wafer scale isolation and interconnection of GaSb based device layers grown on GaAs substrates
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4801008
10.1116/1.4801008
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