Cross-sectional view (schematic diagram) of a typical GaSb/GaAs MIMs structure (only two adjacent devices are shown).
Etch profiles of GaSb measured using a Dektak 8 surface profiler at three different locations (on different cells across the wafer).
Etch profiles of GaAs measured using a Dektak 8 surface profiler at three different locations (on different cells across the wafer).
Etch rate for GaSb as a function of H2O2 concentration in the etching solution KNa-tartrate:HCl:H2O2. The volume ratio ranges from 1:8:0.1 to 1:8:1.5 in 200 ml DI water.
Etch depth for GaSb (a) and GaAs (b) as a function of etching time in KNa-tartrate solution and citric acid solution, respectively.
3D surface views of the device isolation trenches created by the selective wet etching of GaSb/GaAs (a) and after the SiNx depositing and etching (b). The vertical and horizontal dimensions of the etched features are indicated by the scales (bars) inserted in the figures.
Series resistance between two adjacent devices (a) and the saturation current (b) extracted from the dark forward I-V characteristics of four representative devices across the wafer.
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