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Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector
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10.1116/1.4801791
/content/avs/journal/jvstb/31/3/10.1116/1.4801791
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4801791
/content/avs/journal/jvstb/31/3/10.1116/1.4801791
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/content/avs/journal/jvstb/31/3/10.1116/1.4801791
2013-04-18
2014-12-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4801791
10.1116/1.4801791
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