Schematic of the 35-layer In0.50Ga0.50As/GaAs QDIP heterostructure grown by molecular beam epitaxy.
TEM image of the sample showing defect-free heterostructure and stable stacking of QDs.
(Color online) Variation in measured dark current density with bias at temperatures of 77, 140, and 200 K.
(Color online) (a) Spectral response of the 35-layer In0.50Ga0.50As/GaAs quantum dot infrared detector. The transition peak is at 11.5 μm is observed only at 200 K. (b) Schematic diagram showing transitions in the QDIP at different temperature.
(Color online) Measured peak responsivity and peak detectivity as a function of applied bias for the 7.4 μm response at T = 77 K. The measured values of D* reaches a maximum of ∼1.25 × 1010 cm·Hz1/2/W at 1.5 V.
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