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Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector
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10.1116/1.4801791
/content/avs/journal/jvstb/31/3/10.1116/1.4801791
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4801791
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the 35-layer InGaAs/GaAs QDIP heterostructure grown by molecular beam epitaxy.

Image of FIG. 2.
FIG. 2.

TEM image of the sample showing defect-free heterostructure and stable stacking of QDs.

Image of FIG. 3.
FIG. 3.

(Color online) Variation in measured dark current density with bias at temperatures of 77, 140, and 200 K.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Spectral response of the 35-layer InGaAs/GaAs quantum dot infrared detector. The transition peak is at 11.5 m is observed only at 200 K. (b) Schematic diagram showing transitions in the QDIP at different temperature.

Image of FIG. 5.
FIG. 5.

(Color online) Measured peak responsivity and peak detectivity as a function of applied bias for the 7.4 m response at T = 77 K. The measured values of D* reaches a maximum of ∼1.25 × 10 cm·Hz/W at 1.5 V.

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/content/avs/journal/jvstb/31/3/10.1116/1.4801791
2013-04-18
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4801791
10.1116/1.4801791
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