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Epitaxial growth of elemental Sb quantum wells
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Layer sequence for the Sb QW structures.

Image of FIG. 2.
FIG. 2.

(Color online) RHEED patterns along the ⟨110⟩ and ⟨211⟩ directions for a GaSb (111)A surface under an Sb flux at (a) ∼580 °C after growth of the GaSb buffer layer, (b) ∼470 °C with negligible Sb on the surface, (c) ∼330 °C with some Sb at the surface, and (d) ∼220 °C with complete Sb coverage of the surface.

Image of FIG. 3.
FIG. 3.

(Color online) RHEED patterns along the ⟨110⟩ and ⟨211⟩ directions for a GaSb (111)A surface (a) at ∼600 °C, after the growth of a GaSb buffer layer under an Sb flux, and a GaSb (111)A surface at ∼ 280 °C without a Sb flux, (b) just before the Sb QW growth, (c) after the Sb QW growth, and (d) after the GaSb cap layer growth. The RHEED patterns in (d) were captured during a different growth than the patterns in (a)–(c).

Image of FIG. 4.
FIG. 4.

(Color online) Cross-sectional SEM images of thick Sb films grown at 300 °C for deposition times of (a) 60 min and (b) 30 min. The images show thicknesses (∼360 and ∼174 nm) that scale well with deposition times. Roughness due to cleaving can be seen in the images.

Image of FIG. 5.
FIG. 5.

(Color online) Cross-sectional TEM images of an ultrathin Sb structure showing (a) a larger area of the well-ordered ultrathin Sb layer, and (b) sharp interfaces between the Sb and GaSb layers under high resolution. The images were captured from the ⟨211⟩ direction. A nonuniform coverage of the GaSb cap layer is seen in both images. In (a), the image contrast due to a threading dislocation (TD) can be seen.

Image of FIG. 6.
FIG. 6.

Plan view FE-SEM images of the surface of an ultrathin Sb structure (a) grown at 300 °C with a ∼3 nm GaSb cap layer, (b) grown at 280 °C with a ∼6 nm GaSb cap layer, and (c) grown at 280 °C without a GaSb cap layer. The thickness of the Sb layer is noted in each image. The surface morphology of both the cap layer and the Sb layer grown at 280 °C is more uniform than for the capped structure grown at 300 °C. The scale bar is 1 m long.

Image of FIG. 7.
FIG. 7.

(Color online) Two-dimensional electrical resistivity vs temperature for capped ultrathin Sb layers with different thicknesses grown at 280 °C.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of elemental Sb quantum wells