1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
New method for determining flat-band voltage in high mobility semiconductors
Rent:
Rent this article for
USD
10.1116/1.4802478
/content/avs/journal/jvstb/31/3/10.1116/1.4802478
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4802478
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Band structure in each region of normalized capacitance–voltage characteristics. The curve in the accumulation region is convex and in the depletion region is concave.

Image of FIG. 2.
FIG. 2.

Solid line describes a simulation of an ideal capacitor C-V in high frequency. The dotted line depicts the second derivative of the capacitance as a function of gate voltage.

Image of FIG. 3.
FIG. 3.

Capacitance–voltage characteristics of a SiO/Si MOS with an Al electrode. The detailed fabrication procedure was described elsewhere (Ref. ).

Image of FIG. 4.
FIG. 4.

V as a function of the inflection point SiO/Si capacitors with different oxide thickness and different electrode. The detailed fabrication procedure has been described elsewhere (Refs. ).

Image of FIG. 5.
FIG. 5.

(Color online) HFCV measurement and LFCV measurement characteristics of a SiO/Si MOS with an Al electrode (solid lines). The dotted line depicts the second derivatives of the capacitance as a function of gate voltage. The two dotted lines meet the -axis at the same point.

Image of FIG. 6.
FIG. 6.

(Color online) Multi frequency C-V measurement characteristics (solid lines) of a SiO/Si MOS with an Al electrode in 400 K and the second derivatives of the capacitance as a function of gate voltage. All the dotted lines meet the -axis at the same point.

Image of FIG. 7.
FIG. 7.

(Color online) Multi frequency C-V measurement characteristics (solid lines) of AlO/InGaAs MOS with a Ni electrode and the second derivatives of the capacitance as a function of gate voltage. All the dotted lines meet the -axis at the same point.

Loading

Article metrics loading...

/content/avs/journal/jvstb/31/3/10.1116/1.4802478
2013-04-18
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: New method for determining flat-band voltage in high mobility semiconductors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4802478
10.1116/1.4802478
SEARCH_EXPAND_ITEM