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/content/avs/journal/jvstb/31/3/10.1116/1.4802478
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/content/avs/journal/jvstb/31/3/10.1116/1.4802478
2013-04-18
2016-09-29

Abstract

The method that is commonly used for determining the flat-band voltage (V) and the flat-band capacitance (C) of metal oxide semiconductor (MOS) capacitors depends on many parameters and can only be used in the case of low interface trap density (D) when the capacitance–voltage measurements are carried out at high frequencies. This paper demonstrates a new and simple method for determining V and C. The method is based on the point of inflection in the capacitance–voltage curve. This method does not require the knowledge of material or experimental parameters and can be used on high D and high border trap density MOS structures at all frequencies.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=jvstb.avspublications.org/31/3/10.1116/1.4802478&pageURL=http://scitation.aip.org/content/avs/journal/jvstb/31/3/10.1116/1.4802478'
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