(Color online) Diagram of the pole figure experiment configuration showing the tilting axis, χ, and the azimuthal axis, ϕ, with respect to the incident and diffracted beams.
(Color online) (a) HAADF-STEM cross-section micrograph of the NiInGaAs layer created after RTA treatment. (b) HRTEM cross-section micrograph. The insets show Fourier transform patterns of both the InGaAs and the NiInGaAs lattices, taken at about 40° apart.
(Color online) SIMS depth profile collected for an annealed NiInGaAs/InGaAS/InP stack. A uniform composition can be seen at the reacted layer section.
(Color online) XPS spectra taken for bare InGaAs (a,b) and a sample with a thin (∼3 nm) NiInGaAs layer (c,d). the spectra of In 3d (a,c) and As 3d (b,d) reveal the creation of the compound, pronounced by the appearance of a new signal for each orbital.
(Color online) X-ray diffraction of (from top to bottom) NiInGaAs compound (after RTA) on InGaAs, InGaAs with unannealed Ni, and bare InGaAs.
(Color online) Pole figure textures gathered for InGaAs with NiInGaAs layer and bare InGaAs at 2θ = (a) 31.9°, (b) 44.8°, (c) 46.7°, and (d) 66.4°. In order to isolate the contribution of the silicide-like layer, peak difference maps were illustrated. In two shades of grey, the more intensive peak sets [in (b) and (c)] are emphasized.
(Color online) Analysis of the orientation relations of the substrate and layer. (a) The hexagonal structure of NiInGaAs and the 2θ = 46.7° NiInGaAs pole figure with two of the plane family (red circles) with their zone axis (red arrow). (b) The cubic structure of InGaAs and the 2θ = 46.7° bare InGaAs pole figure with the vector, one of the ⟨311⟩ vector groups (top red circle) and the surface normal (bottom red circle) with their zone axis , one of the ⟨110⟩ vector groups. As seen in the pole figures, the and are parallel.
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