(Color online) Growth rate of the films deposited by LIS as a function of bias voltage.
(Color online) AFM images of the films deposited at a bias voltage of (a) 0 V, (b) −100 V, and (d) −200 V. (d) Roughness of the films as a function of bias voltage.
Typical TEM micrograph and corresponding diffraction pattern of the DLC films deposited at a bias of −100 V.
(Color online) (a) Representative Raman spectrum of the DLC films deposited by LIS with various bias voltages; (b) corresponding ID/IG ratios and G-peak positions of the Raman spectrum in (a). (c) and (d) are the average residual stress, hardness, and elastic modulus of DLC films as a function of bias voltage.
(Color online) Typical I-V curves (the higher and lower are linear and semilogarithmic scales, respectively) of the Cu/DLC/Pt structure cells at (a) 0 V, (b) −100 V, and (c) −300 V.
(Color online) Endurance performance of the Cu/DLC/Pt structure cell. More than 100 write–erase cycles were demonstrated. The resistance values of HRS and LRS vs the switching cycles at 0.1 V reading voltage.
Deposition conditions of the DLC films by LIS.
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