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Growth properties and resistive switching effects of diamond-like carbon films deposited using a linear ion source
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10.1116/1.4803741
/content/avs/journal/jvstb/31/3/10.1116/1.4803741
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4803741

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Growth rate of the films deposited by LIS as a function of bias voltage.

Image of FIG. 2.
FIG. 2.

(Color online) AFM images of the films deposited at a bias voltage of (a) 0 V, (b) −100 V, and (d) −200 V. (d) Roughness of the films as a function of bias voltage.

Image of FIG. 3.
FIG. 3.

Typical TEM micrograph and corresponding diffraction pattern of the DLC films deposited at a bias of −100 V.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Representative Raman spectrum of the DLC films deposited by LIS with various bias voltages; (b) corresponding ratios and G-peak positions of the Raman spectrum in (a). (c) and (d) are the average residual stress, hardness, and elastic modulus of DLC films as a function of bias voltage.

Image of FIG. 5.
FIG. 5.

(Color online) Typical curves (the higher and lower are linear and semilogarithmic scales, respectively) of the structure cells at (a) 0 V, (b) −100 V, and (c) −300 V.

Image of FIG. 6.
FIG. 6.

(Color online) Endurance performance of the structure cell. More than 100 write–erase cycles were demonstrated. The resistance values of HRS and LRS vs the switching cycles at 0.1 V reading voltage.

Tables

Generic image for table
TABLE I.

Deposition conditions of the DLC films by LIS.

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/content/avs/journal/jvstb/31/3/10.1116/1.4803741
2013-05-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth properties and resistive switching effects of diamond-like carbon films deposited using a linear ion source
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4803741
10.1116/1.4803741
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